Detection apparatus

ABSTRACT

A detection apparatus is provided and includes detection electrodes; detection circuit configured to be coupled to detection electrodes to detect detection signals corresponding to changes in capacitance of detection electrodes; coupling circuit configured to cause detection electrodes to be a coupled state in which detection electrodes are coupled to detection circuit and non-coupled state in which detection electrodes are uncoupled from detection circuit; drive electrode arranged at a position adjacent to detection electrodes; conductor arranged between detection electrodes and drive electrode; and drive signal generation circuit configured to be coupled to drive electrode to supply drive signal to drive electrode; wherein detection electrodes are provided to one face of insulating substrate, and wherein height of drive electrode from the one face is greater than height of the detection electrodes from the one face.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/694,033, filed on Nov. 25, 2019, which application claims priorityfrom Japanese Application No. 2018-226099, filed on Nov. 30, 2018, thecontents of which are incorporated by reference herein in its entirety.

BACKGROUND 1. Technical Field

The present invention relates to a detection apparatus.

2. Description of the Related Art

It is known that there is a method for improving accuracy in a detectionapparatus that can detect an external proximity object based on a changein capacitance, by switching among a plurality of combination patternsof detection electrodes that are used for detection and detectionelectrodes that are not used for detection among a plurality ofdetection electrodes.

The method described above assumes that, in each detection process,signals are integrated by using two combination patterns that areopposite to each other in the positional relation between the detectionelectrodes that are used for detection and the detection electrodes thatare not used for detection among the detection electrodes. Such a methodhas caused increases in various kinds of loads corresponding todetection accuracy such as the lengthening of one detection time causedby an increase in the number of combination patterns, the enlargement ofthe amount of data required for detection, and an increase in requireddata processing capability. Given these circumstances, there have beendemands for a detection apparatus that can achieve both a reduction inloads and an improvement in accuracy.

For the foregoing reasons, there is a need for a detection apparatusthat can achieve both a reduction in loads and an improvement inaccuracy.

SUMMARY

According to an aspect, a detection apparatus includes: a plurality ofdetection electrodes; a detection circuit configured to be coupled tothe detection electrodes to detect detection signals corresponding tochanges in capacitance of the detection electrodes; and a couplingcircuit configured to cause the detection electrodes to be a coupledstate in which the detection electrodes are coupled to the detectioncircuit and a non-coupled state in which the detection electrodes areuncoupled from the detection circuit. The detection apparatus has aplurality of selection patterns of the detection electrodes causingdetection electrodes as first selection targets among the detectionelectrodes to be the coupled state in which the detection electrodes asthe first selection targets are coupled to the detection circuit andcausing detection electrodes as second selection targets that are notincluded in the first selection targets to be the non-coupled state inwhich the detection electrodes as the second selection targets are notcoupled to the detection circuit. The selection patterns do not includeany selection patterns causing detection electrodes as the firstselection targets to be the non-coupled state and causing detectionelectrodes as the second selection targets to be the coupled state.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a configuration example of a detectionapparatus according to a first embodiment;

FIG. 2 is a schematic diagram of a configuration example of thedetection apparatus;

FIG. 3 is a schematic diagram of a configuration example of a sensorincluded in the detection apparatus;

FIG. 4 is a diagram schematically illustrating how a drive signal istransmitted to a detection electrode from a drive electrode via afinger;

FIG. 5 is an illustrative diagram of an example of an equivalent circuitfor illustrating a detection operation by the sensor and a detectioncircuit;

FIG. 6 is a diagram of an example of waveforms of the drive signal and adetection signal of the detection operation;

FIG. 7 is a sectional view of a configuration example of a substrate ofthe detection apparatus;

FIG. 8 is a plan view of a configuration example of the detectionapparatus;

FIGS. 9A to 9D are diagrams illustrating selection patterns of detectionelectrodes by sign selection driving;

FIG. 10 is a timing waveform diagram of an operation example of thedetection apparatus according to the first embodiment;

FIGS. 11A to 11G are diagrams of selection patterns of detectionelectrodes by positive sign selection driving for a plurality ofdetection electrode blocks;

FIG. 12 is a diagram of drive waveforms corresponding to a firstmodification of the first embodiment;

FIG. 13 is a diagram of drive waveforms of the detection apparatus in asecond embodiment;

FIGS. 14A to 14H are diagrams of selection patterns of the detectionelectrodes by negative sign selection driving for the detectionelectrode blocks;

FIG. 15 is a diagram of drive waveforms corresponding to a firstmodification of the second embodiment;

FIG. 16 is a diagram of drive waveforms corresponding to a secondmodification of the second embodiment;

FIGS. 17A to 17D are illustrative diagrams for illustrating an exampleof a selection pattern by a second selection circuit when detectionelectrodes are selected by a first selection circuit according to afourth embodiment in accordance with a first selection pattern;

FIGS. 18A to 18D are illustrative diagrams for illustrating an exampleof a selection pattern by the second selection circuit when detectionelectrodes are selected by the first selection circuit according to thefourth embodiment in accordance with a second selection pattern;

FIGS. 19A to 19D are illustrative diagrams for illustrating an exampleof a selection pattern by the second selection circuit when detectionelectrodes are selected by the first selection circuit according to thefourth embodiment in accordance with a third selection pattern;

FIGS. 20A to 20D are illustrative diagrams for illustrating an exampleof a selection pattern by the second selection circuit when detectionelectrodes are selected by the first selection circuit according to thefourth embodiment in accordance with a fourth selection pattern;

FIG. 21 is a diagram of a configuration example of the detectionapparatus according to a fifth embodiment;

FIG. 22 is a diagram of a configuration example of the detectionapparatus according to a sixth embodiment;

FIG. 23 is a plan view of a detection apparatus according to a seventhembodiment;

and

FIG. 24 is a sectional view of the detection apparatus according to theseventh embodiment.

DETAILED DESCRIPTION

The following describes modes (embodiments) for carrying out the presentinvention in detail with reference to the accompanying drawings. Thedetails described in the embodiments below do not limit the presentinvention. Components described below include those easily conceivableby those skilled in the art or those substantially identical thereto.Further, the components described below can be combined as appropriate.The disclosure is only an example, and the scope of the presentinvention naturally includes appropriate changes with the gist of theinvention maintained that can be easily thought of by those skilled inthe art. To further clarify the description, widths, thicknesses,shapes, and the like of various parts are schematically illustrated inthe drawings as compared with actual aspects thereof, in some cases.However, they are merely examples, and interpretation of the presentdisclosure is not limited thereto. In the present specification and thedrawings, the same element as that illustrated in a drawing that hasalready been discussed is denoted by the same reference numeral throughthe specification and the drawings, and detailed description thereofwill not be repeated in some cases where appropriate.

In this disclosure, when an element is described as being “on” anotherelement, the element can be directly on the other element, or there canbe one or more elements between the element and the other element.

First Embodiment

FIG. 1 is a block diagram of a configuration example of a detectionapparatus according to a first embodiment. FIG. 2 is a schematic diagramof a configuration example of the detection apparatus. FIG. 3 is aschematic diagram of a configuration example of a sensor included in thedetection apparatus. The detection apparatus 100 of this embodiment is adetection apparatus detecting capacitance between a fine recess or afine protrusion and a detection electrode and is a fingerprint detectionapparatus, for example. As illustrated in FIG. 1, the detectionapparatus 100 includes a sensor 1, a detection control circuit 11, afirst selection circuit 14, a second selection circuit 15, and adetection circuit 40.

As illustrated in FIG. 2 and FIG. 3, the sensor 1 includes an insulatingbase member 101, a plurality of detection electrodes Rx provided on oneface 101 a of the base member 101, a plurality of switch elements SW1,scan lines GCL coupled to the switch elements SW1, data lines SGLcoupled to the switch elements SW1, and a detection electrode Tx (adrive electrode). The switch elements SW1 are each a thin filmtransistor, for example. The scan lines GCL are wiring lines forsupplying a scan signal to the switch elements SW1. When the switchelements SW1 are each a transistor, for example, the scan lines GCL areeach coupled to a gate of the transistor. The data lines SGL are wiringlines electrically coupled to the detection electrodes Rx in accordancewith the scan signal from the scan lines GCL. In other words, the datalines SGL are wiring lines to which detection signals Sv are output fromthe detection electrodes Rx. When the switch elements SW1 are each atransistor, for example, the data lines SGL are each coupled to a sourceof the transistor. The base member 101 is made of glass, for example. Asillustrated in FIG. 2, the sensor 1 further has a shield layer 24between the detection electrodes Rx and the switch elements SW1. Inother words, the switch elements SW1, the scan lines GCL, and the datalines SGL are provided between the one face 101 a of the base member 101and the shield layer 24.

The first selection circuit 14 and the second selection circuit 15 areprovided on the one face 101 a of the base member 101. The data linesSGL are coupled to the second selection circuit 15. The scan lines GCLare coupled to the first selection circuit 14. The shield layer 24 iscoupled to fixed potential (e.g., ground potential). This hinders thepotential of the detection electrodes Rx from having an influence on thedata lines SGL and the like and thus suppresses noise that wouldotherwise be caused. The shield layer 24 may be in a floating state, inwhich the potential thereof is not fixed.

As illustrated in FIG. 3, the sensor 1 has a detection area DA and aperipheral area PA other than the detection area DA. The detection areaDA is rectangular in shape, for example. In the detection area DA, thedetection electrodes Rx and the switch elements SW1 are arranged. Theperipheral area PA of the sensor 1 is formed along at least one side ofthe detection area DA when the detection area DA is rectangular inshape. In the peripheral area PA of the sensor 1, the detectionelectrode Tx (the drive electrode) is arranged. The sensor 1 further hasa conductor 26. The conductor 26 is arranged in the peripheral area PA.More specifically, the conductor 26 is arranged between the detectionelectrodes Rx and the detection electrode Tx. The conductor 26 iscoupled to the detection circuit 40. The conductor 26 is an electrodefor detecting the approach of an external object (e.g., a finger Fin) tothe sensor 1. The conductor 26 is coupled to a clock signal generationcircuit 110, for example, and a drive signal Vs is supplied thereto.When the finger Fin approaches the conductor 26, capacitance occursbetween the conductor 26 and the finger Fin, and the capacitance valueof the conductor 26 increases. A change in the capacitance value of theconductor 26 is detected by the detection circuit 40 coupled to theconductor 26, whereby the approach of the external object (e.g., thefinger Fin) to the sensor 1 can be detected. The detection circuit 40may stop supply of the drive signal Vs to the detection electrode Tx bythe detection control circuit 11 and reception of the detection signalsSv from the detection electrodes Rx by the detection circuit 40 untilthe detection circuit 40 detects the approach the finger Fin by theconductor 26, and may start the operation of the detection electrode Txby the detection control circuit 11 and the operation of the detectionelectrodes Rx by the detection circuit 40 when the approach of thefinger Fin has been detected by the conductor 26. A mode of operatingonly the conductor 26 is referred to as a standby mode.

The drive signal Vs is supplied to the detection electrode Tx. Thedetection electrode Tx is arranged outside the detection area DA inwhich the detection electrodes Rx are arranged, for example. Morespecifically, the detection electrode Tx is arranged outside theconductor 26. That is to say, the conductor 26 is arranged between thedetection electrodes Rx and the detection electrode Tx. The detectionelectrodes Rx, the conductor 26, and the detection electrode Tx arearranged spaced apart from each other.

The detection control circuit 11 controls each operation of the sensor1, the first selection circuit 14, the second selection circuit 15, andthe detection circuit 40. The detection control circuit 11 supplies thedrive signal Vs for detection to the detection electrode Tx. The firstselection circuit 14 supplies the scan signal to a scan line GCLselected based on a selection signal Vgcl supplied from the detectioncontrol circuit 11. In other words, the first selection circuit 14 is aselection circuit selecting a plurality of detection electrodes Rx(refer to FIG. 12 described later) coupled in a row direction (an Xdirection) and coupled to the scan line GCL. The first selection circuit14 is a gate driver, such as a decoder. The second selection circuit 15couples, to the detection circuit 40, a data line SGL selected based ona selection signal Vsel supplied from the detection control circuit 11.In other words, the second selection circuit 15 is a selection circuitselecting the detection electrodes Rx coupled to the data line SGL in acolumn direction (a Y direction). The second selection circuit 15 is amultiplexer, for example.

As illustrated in FIG. 3, for example, the sensor 1 has the detectionelectrodes Rx, scan lines GCL(k), GCL(k+1), . . . and data lines SGL(l),SGL(l+1), . . . . The k and l are each an integer equal to or greaterthan 1. The detection electrodes Rx are arranged in the row direction(the X direction) and the column direction (the Y direction) each. Thescan lines GCL(k), GCL(k+1), . . . are wiring lines for turning on andoff the switch elements SW1. The scan lines GCL(k), GCL(k+1), . . . arearranged in the column direction (the Y direction) and extend in the rowdirection (the X direction). The data lines SGL(l), SGL(l+1), . . . arewiring lines for outputting the detection signals Sv. The data linesSGL(l), SGL(l+1), . . . are arranged in the row direction (the Xdirection) and extend in the column direction (the Y direction). In thefollowing description, when there is no need to separately describe thescan lines GCL(k), GCL(k+1), . . . , each of them will be referred tosimply as a scan line GCL. When there is no need to separately describethe data lines SGL(l), SGL(l+1), . . . , each of them will be referredto simply as a data line SGL.

The first selection circuit 14 selects certain scan lines GCL (e.g.,GCL(k) and GCL(k+2)) out of a plurality of scan lines GCL based on theselection signal Vgcl supplied from the detection control circuit 11.The first selection circuit 14 then applies a certain voltage (a scansignal) to the selected scan lines GCL(k) and GCL(k+2). With thisoperation, the detection electrodes Rx belonging to the k-th row and thedetection electrodes Rx belonging to the (k+2)-th row are coupled to thesecond selection circuit 15 via the data lines SGL(l), SGL(l+1), . . . .The second selection circuit 15 selects certain data lines SGL (e.g.,SGL(l)) out of a plurality of data lines SGL based on a signal suppliedfrom the detection control circuit 11. The second selection circuit 15then couples the selected data line SGL(l) to the detection circuit 40.With this operation, the detection signal Sv is supplied to thedetection circuit 40 from the detection electrode Rx on the k-th row andthe 1-th column and the detection electrode Rx on the (k+2)-th row andthe l-th column.

The detection circuit 40 detects a recess or a protrusion on the surfaceof the finger Fin or the like being in contact with or proximity to thesensor 1 based on the detection signal Sv output from the secondselection circuit 15 in accordance with the signal supplied from thedetection control circuit 11 to detect the shape and fingerprint of thefinger Fin. The detection circuit 40 includes a detection signalamplifier circuit 42, an analog-to-digital (A/D) conversion circuit 43,a signal computing circuit 44, a coordinates extraction circuit 45, acombination circuit 46, a detection timing control circuit 47, and astorage circuit 48. The detection timing control circuit 47 performscontrol to cause the detection signal amplifier circuit 42, the A/Dconversion circuit 43, the signal computing circuit 44, the coordinatesextraction circuit 45, and the combination circuit 46 to operate in syncwith each other based on a clock signal supplied from the detectioncontrol circuit 11.

The detection signal Sv is supplied to the detection signal amplifiercircuit 42 of the detection circuit 40 from the sensor 1. The detectionsignal amplifier circuit 42 amplifies the detection signal Sv. The A/Dconversion circuit 43 converts an analog signal output from thedetection signal amplifier circuit 42 into a digital signal.

The signal computing circuit 44 is a logic circuit detecting a recess orprotrusion of the finger Fin against the sensor 1 based on an outputsignal of the A/D conversion circuit 43. The signal computing circuit 44calculates a differential signal of the detection signal Sv (an absolutevalue |ΔV|) by the recess or protrusion of the finger Fin based on thedetection signal Sv output from the sensor 1. The signal computingcircuit 44 compares the absolute value |ΔV| with a certain thresholdvoltage and, if this absolute value |ΔV| is less than the thresholdvoltage (a second threshold Vth2), determines that the recess of thefinger Fin has been detected. In contrast, if the absolute value |ΔV| isequal to or greater than the threshold voltage, the signal computingcircuit 44 determines that the protrusion of the finger Fin has beendetected. Thus, the detection circuit 40 can detect the recess orprotrusion of the finger Fin. Likewise, when a signal is input to thedetection circuit 40 via the conductor 26, the signal computing circuit44 compares the absolute value |ΔV| with a certain threshold voltageand, if this absolute value |ΔV| is less than the threshold voltage (afirst threshold Vth1), determines that the finger Fin is in a noncontactstate. In contrast, if the absolute value |ΔV| is equal to or greaterthan the threshold voltage, the signal computing circuit 44 determinesthat the finger Fin is in a contact state.

As described later, the signal computing circuit 44 receives thedetection signal Sv from a detection electrode block RxB to performcomputation processing thereon based on a certain sign. The computeddetection signal Sv is temporarily stored in the storage circuit 48.Further, the signal computing circuit 44 receives the detection signalSv stored in the storage circuit 48 to perform decoding processingthereon based on the certain sign. The certain sign is stored in thestorage circuit 48 in advance, for example. The detection controlcircuit 11 and the signal computing circuit 44 can read the certain signstored in the storage circuit 48 at any timing. The storage circuit 48may be any of a random access memory (RAM), a read only memory (ROM), aregister circuit, and the like, for example.

The coordinates extraction circuit 45 is a logic circuit that, when therecess or protrusion of the finger Fin is detected by the signalcomputing circuit 44, determines its detected coordinates. Thecoordinates extraction circuit 45 calculates the detected coordinatesbased on a decoded detection signal Sid and outputs the obtaineddetected coordinates to the combination circuit 46. The combinationcircuit 46 combines the detected coordinates output from the coordinatesextraction circuit 45 together to generate two-dimensional informationindicating the shape and fingerprint of the finger Fin being in contactor proximity. The combination circuit 46 outputs an output signal Voutof the detection circuit 40 as the two-dimensional information. Thecombination circuit 46 may generate an image based on thetwo-dimensional information, and its image information may be the outputsignal Vout. At least one of the coordinates extraction circuit 45 andthe combination circuit 46 may be arranged in an external apparatuscoupled to the detection apparatus 100. In other words, a detectionsignal Sid decoded by the signal computing circuit 44 may be output asthe output signal Vout. The detection apparatus 100 can detect theproximity of an object, not limited to the finger Fin, which can have aninfluence on the capacitance of the detection electrodes Rx.

As illustrated in FIG. 1, the detection control circuit 11 includes theclock signal generation circuit 110, a drive signal generation circuit112, and a counter circuit 116. The counter circuit 116 includes a firstcontrol circuit 114 and a second control circuit 115.

The clock signal generation circuit 110 generates a clock signal. Thisclock signal is supplied to the counter circuit 116 of the detectioncontrol circuit 11 and the detection timing control circuit 47 of thedetection circuit 40, for example.

The counter circuit 116 measures the number of pulses of the clocksignal generated by the clock signal generation circuit 110. The countercircuit 116 then, based on the measured value of the number of pulses,generates a first timing control signal for controlling the timing atwhich a scan line GCL out of the scan lines GCL is selected and suppliesthe generated first timing control signal to the first control circuit114. The first control circuit 114 generates the selection signal Vgcl(e.g., a selection signal Vgclp or a selection signal Vgclm illustratedin FIG. 12 described later) for selecting the detection electrode Rx(refer to FIG. 3) based on the first timing control signal supplied fromthe counter circuit 116 and supplies the generated selection signal Vgclto the first selection circuit 14. The first selection circuit 14supplies a scan signal to the scan line GCL based on the selectionsignal Vgcl supplied from the first control circuit 114. With thisoperation, a certain scan line GCL is selected out of the scan linesGCL. The detection electrode Rx coupled to the selected scan line GCL iscoupled to the data line SGL.

The counter circuit 116 generates a second timing control signal forcontrolling the timing at which a data line SGL out of the data linesSGL is selected based on the measured value of the number of pulses ofthe clock signal described above. The counter circuit 116 supplies thegenerated second timing control signal to the second control circuit115. The second control circuit 115 outputs the selection signal Vsel tothe second selection circuit 15 based on the second timing controlsignal supplied from the counter circuit 116. The selection signal Vselis a signal for scanning switches in the second selection circuit 15.With this operation, a certain data line SGL is selected out of the datalines SGL. The selected data line SGL is coupled to the detectioncircuit 40 via the second selection circuit 15.

The drive signal generation circuit 112 generates the drive signal Vsfor detection and outputs the drive signal Vs for detection to thedetection electrode Tx.

The sensor 1 illustrated in FIG. 1 to FIG. 3 detects changes in thecapacitance of the detection electrode Rx. The following describes adetection operation by the sensor 1 with reference to FIG. 4 to FIG. 6.FIG. 4 is a diagram schematically illustrating how a drive signal istransmitted to a detection electrode from a drive electrode via thefinger Fin. FIG. 5 is an illustrative diagram of an example of anequivalent circuit for illustrating a detection operation by a sensorand a detection circuit. FIG. 6 is a diagram of an example of waveformsof the drive signal and a detection signal of the detection operation.

As illustrated in FIG. 4, a capacitance element C1 is formed between thedetection electrode Tx and the detection electrode Rx. As illustrated inFIG. 5, an alternating current (AC) signal source S is coupled to thedetection electrode Tx. In other words, the drive signal Vs is suppliedfrom the detection control circuit 11 to the detection electrode Tx. Thedetection electrode Rx is coupled to a voltage detector DET. The voltagedetector DET corresponds to the detection signal amplifier circuit 42 ofthe detection circuit 40, for example. The voltage detector DET is anintegrating circuit.

The drive signal Vs applied to the detection electrode Tx is an ACrectangular wave with a certain frequency (e.g., a frequency of theorder of several kilohertz to several hundred kilohertz), for example.When the drive signal Vs is applied to the detection electrode Tx, thedetection signal Sv is output from the detection electrode Rx via thevoltage detector DET.

In a state in which the finger Fin is not in contact or proximity (anoncontact state), a current corresponding to the capacitance value ofthe capacitance element C1 flows with charging and discharging of thecapacitance element C1. The detection circuit 40 converts variations ina current I1 corresponding to the drive signal Vs into variations involtage (a dotted line waveform V1 (refer to FIG. 6)).

In contrast, in a state in which the finger Fin is in contact orproximity (a contact state), as illustrated in FIG. 4, the finger Fin isin contact with the detection electrode Tx. Then the drive signal Vssupplied to the detection electrode Tx from the detection controlcircuit 11 has an influence on the detection electrode Rx via the fingerFin and an insulating protective layer 33 (e.g., an insulating resin)protecting the sensor 1. That is to say, the finger Fin acts as part ofthe detection electrode Tx. Thus, in the contact state, the separatingdistance between the detection electrode Tx and the detection electrodeRx is substantially short, and the capacitance element C1 acts as acapacitance element with a capacitance value larger than a capacitancevalue in the noncontact state. Further, a difference in the separatingdistance to the detection electrode Rx occurs between the recess and theprotrusion of the finger Fin, and the capacitance value of thecapacitance element C1 occurring at the protrusion of the finger Fin islarger than that occurring at the recess of the finger Fin. Asillustrated in FIG. 6, the detection circuit 40 converts variations in acurrent I2 or I3 corresponding to the drive signal Vs into variations involtage (a solid line waveform V2 or waveform V3). The waveform V2corresponds to a waveform in a state in which the recess of the fingerFin is in contact, whereas the waveform V3 corresponds to a waveform ina state in which the protrusion of the finger Fin is in contact.

In this case, the waveform V2 and the waveform V3 are larger inamplitude than the waveform V1 described above. In addition, thewaveform V3 is larger in amplitude than the waveform V2. With thisrelation, the absolute value |ΔV| of a voltage difference between thewaveform V1 and the waveform V2 changes depending on the contact orproximity of the external object such as the finger Fin and a recess orprotrusion of the external object. In order to detect the absolute value|ΔV| of the voltage difference between the waveform V1 and the waveformV2 or the waveform V3 with high precision, the voltage detector DET morepreferably performs an operation including a period Reset in which thecharging and discharging of a capacitor are reset by switching withinthe circuit in accordance with the frequency of the drive signal Vs.

The detection circuit 40 compares the absolute value |ΔV| with the firstthreshold Vth1. If the absolute value |ΔV| is less than the firstthreshold Vth1, the detection circuit 40 determines that the finger Finis in a noncontact state. In contrast, if the absolute value |ΔV| isequal to or greater than the first threshold Vth1, the detection circuit40 determines that the finger Fin is in a contact-or-proximity state.Further, the detection circuit 40 compares the absolute value |ΔV| withthe second threshold Vth2. If the absolute value |ΔV| is less than thesecond threshold Vth2, the detection circuit 40 determines that therecess of the finger Fin is in contact. In contrast, if the absolutevalue |ΔV| is equal to or greater than the second threshold Vth2, thedetection circuit 40 determines that the protrusion of the finger Fin isin contact. The second threshold Vth2 is a value larger than the firstthreshold Vth1.

FIG. 7 is a sectional view of a configuration example of a substrate ofthe detection apparatus. FIG. 7 is a diagram of part of a sectionobtained by cutting FIG. 8, which will be described later, along anA11-A12 line. The sensor 1 described above is provided on a substrate10. As illustrated in FIG. 7, the substrate 10 has the base member 101,a semiconductor layer 103, an insulating film 105, a gate electrode 107,a wiring layer 109, an insulating film 111, a source electrode 113, adrain electrode 118, an insulating film 117, the shield layer 24, aninsulating film 121, the detection electrode Rx, the conductor 26, and aprotective film 131.

The semiconductor layer 103 is provided on the one face 101 a of thebase member 101. The insulating film 105 is provided on the base member101 to cover the semiconductor layer 103. An upper face of theinsulating film 105 is flattened.

The gate electrode 107 is provided on the insulating film 105. Theinsulating film 111 is provided on the insulating film 105 to cover thegate electrode 107. An upper face of the insulating film 111 isflattened.

Through holes bottomed by the semiconductor layer 103 are provided inthe insulating film 111 and the insulating film 105. The sourceelectrode 113 and the drain electrode 118 are provided on the insulatingfilm 111. The source electrode 113 and the drain electrode 118 areindividually coupled to the semiconductor layer 103 via the throughholes provided in the insulating film 111 and the insulating film 105.

The insulating film 117 is provided on the insulating film 111 to coverthe source electrode 113 and the drain electrode 118. An upper face ofthe insulating film 117 is flattened. The shield layer 24 is provided onthe insulating film 117. The insulating film 121 is provided on theinsulating film 117 to cover the shield layer 24. An upper face of theinsulating film 121 is flattened. A through hole bottomed by the drainelectrode 118 is provided in the insulating film 117 and the insulatingfilm 121. The detection electrode Rx is provided on the insulating film121. The detection electrode Rx is coupled to the drain electrode 118via the through hole provided in the insulating film 121 and theinsulating film 117. The conductor 26 is provided on the insulating film121. The protective film 131 is provided on the insulating film 121 tocover the detection electrode Rx and the conductor 26.

The following describes examples of the materials of the respectivefilms laminated on the base member 101. The insulating film 105, theinsulating film 111, the insulating film 117, and the insulating film121 are formed of inorganic films such as a silicon oxide film, asilicon nitride film, and a silicon oxide nitride film. Any one of theinsulating film 105, the insulating film 111, the insulating film 117,and the insulating film 121 may be an organic insulating film. Theinsulating film 105, the insulating film 111, the insulating film 117,and the insulating film 121 are each not limited to a single layer andmay be each a film with a laminated structure. The insulating film 105may be a film with a laminated structure in which a silicon nitride filmis formed on a silicon oxide film, for example.

The semiconductor layer 103 is formed of any of an amorphous siliconfilm, a polysilicon film, and an oxide semiconductor film, for example.The gate electrode 107 is formed of aluminum (Al), copper (Cu), silver(Ag), molybdenum (Mo), or an alloy film thereof. The source electrode113 and the drain electrode 118 are each formed of a titanium-aluminum(TiAl) film as an alloy of titanium and aluminum. The shield layer 24,the detection electrode Rx, and the conductor 26 are each formed of aconductor film that allows visible light to pass therethrough. In thefollowing, the property that allows visible light to pass will bereferred to as translucency. Examples of the conductor film withtranslucency include an indium tin oxide (ITO) film. The detectionelectrode Rx and the conductor 26 may be formed of metallic thin lineshaving mesh-like openings. The protective film 131 is a passivationfilm, for example. The protective film 131 is an insulating film, forexample, and is formed of a film of an inorganic material such as asilicon nitride film or a resin film. The protective film 131corresponds to the protective layer 33 illustrated in FIG. 4. Theprotective film 131 and the protective layer 33 may be separate layersand may be formed of different materials.

Although the gate electrode 107 has a top gate structure, in which it isarranged above the semiconductor layer 103, but its structure is notlimited thereto; the gate electrode 107 may have a bottom gatestructure, in which it is arranged below the semiconductor layer 103.The detection apparatus 100 does not necessarily have the shield layer24 and the insulating film 121.

FIG. 8 is a plan view of a configuration example of the detectionapparatus. As illustrated in FIG. 8, the detection apparatus 100includes the substrate 10, a first circuit board 20, and a secondcircuit board 30. The substrate 10 and the first circuit board 20 arearranged on one face 30 a of the second circuit board 30, for example.The first circuit board 20 is a flexible board, for example. The secondcircuit board 30 is a rigid board such as a printed circuit board (PCB),for example. The first circuit board 20 couples the substrate 10 and thesecond circuit board 30 to each other.

As illustrated in FIG. 8, the substrate 10 is provided with the sensor1, the clock signal generation circuit 110, and the counter circuit 116.The counter circuit 116 includes the first selection circuit 14 and thesecond selection circuit 15. The detection electrodes Rx included in thesensor 1 are coupled to the first selection circuit 14 via the scanlines GCL. The detection electrodes Rx included in the sensor 1 arecoupled to an input side of the second selection circuit 15 via the datalines SGL. The counter circuit 116 is coupled to the first selectioncircuit 14, the second selection circuit 15, and the clock signalgeneration circuit 110 via wiring. The first selection circuit 14 isarranged between the detection electrodes Rx and the detection electrodeTx. The conductor 26 is arranged between the first selection circuit 14and the detection electrodes Rx.

The first circuit board 20 is provided with an IC 21. An output side ofthe second selection circuit 15 is coupled to a plurality of terminalsof the IC 21 via a plurality of wiring lines 16A. The conductor 26 iscoupled to one terminal of the IC 21 via a wiring line 16B. The countercircuit 116 is coupled to the IC 21 via wiring. The clock signalgeneration circuit 110 is coupled to the IC 21 via wiring.

On the one face 30 a of the second circuit board 30, the detectionelectrode Tx is provided. The clock signal generation circuit 110 iscoupled to the detection electrode Tx via the IC 21 and wiring on thesecond circuit board 30. The detection electrode Tx may be of a ringshape surrounding the sensor 1 or, as illustrated in FIG. 8, may be of ashape lacking part of the ring surrounding the sensor 1. The detectionelectrode Tx may be of a shape lacking one side out of four sides in arectangular ring surrounding the sensor 1, for example. The detectionelectrode Tx may be arranged so as not to overlap, in a plan view, thedata lines SGL that couple the sensor 1 to the second selection circuit15, for example. The detection electrode Tx may be arranged so as not tooverlap, in a plan view, the wiring lines 16A that couple the secondselection circuit 15 to the IC 21. With this arrangement, the drivesignal Vs to be supplied to the detection electrode Tx can be inhibitedfrom having an influence on the data lines SGL or the wiring lines 16A,and thus noise, which would otherwise be caused, can be suppressed.

At least partial components of the detection control circuit 11 and atleast partial components of the detection circuit 40 illustrated in FIG.1 are included in the IC 21. Among the various components of thedetection circuit 40 illustrated in FIG. 1, the detection signalamplifier circuit 42, the A/D conversion circuit 43, the signalcomputing circuit 44, the coordinates extraction circuit 45, thecombination circuit 46, the detection timing control circuit 47, and thestorage circuit 48 are included in the IC 21, for example. Among thevarious components of the detection control circuit 11 illustrated inFIG. 1, the clock signal generation circuit 110 is included in the IC21. At least partial components of the detection circuit 40 illustratedin FIG. 1 are formed on the substrate 10. Among the various kinds ofcomponents of the detection control circuit 11 illustrated in FIG. 1,the counter circuit 116 and the clock signal generation circuit 110 areformed on the substrate 10, for example. The IC 21 may have a protectivecircuit as a circuit to be coupled to the clock signal generationcircuit 110 and the detection electrode Tx. The protective circuit, forexample, is a diode that prevents the sensor 1 from electro-staticdischarge (ESD), which would otherwise be conveyed to the sensor 1 fromthe detection electrode Tx through the IC 21.

At least partial components of the detection control circuit 11illustrated in FIG. 1 may be included in the first selection circuit 14.The first control circuit 114 may be included in the first selectioncircuit 14, for example. At least partial components of the detectioncontrol circuit 11 or at least partial components of the detectioncircuit 40 illustrated in FIG. 1 may be included in an IC providedseparately from the IC 21 and arranged on the second circuit board 30.The protective circuit may be provided on the second circuit board 30and coupled to the clock signal generation circuit 110 and the detectionelectrode Tx not through the IC 21, for example. At least partialcomponents of the detection control circuit 11 and the detection circuit40 may be included in a central processing unit (CPU) arranged on anexternal substrate coupled to the second circuit board 30. The substrate10 may have an integrated circuit not illustrated. In this case, atleast partial components of the detection control circuit 11 or at leastpartial components of the detection circuit 40 illustrated in FIG. 1 maybe included in the integrated circuit of the substrate 10. Among thevarious kinds of components of the detection circuit 40, the detectionsignal amplifier circuit 42 may be included in the integrated circuit ofthe substrate 10, for example.

The following describes a method for detecting a fingerprint by thedetection apparatus 100. The detection apparatus 100 performs signselection driving for the detection electrode block RxB including aplurality of detection electrodes Rx to detect a fingerprint. The signselection driving is a detection operation based on a certain sign.FIGS. 9A to 9D are diagrams illustrating selection patterns of detectionelectrodes by the sign selection driving. FIG. 9A illustrates aselection pattern of the detection electrodes Rx in a detectionoperation Td1. FIG. 9B illustrates a selection pattern of the detectionelectrodes Rx in a detection operation Td2. FIG. 9C illustrates aselection pattern of the detection electrodes Rx in a detectionoperation Td3. FIG. 9D illustrates a selection pattern of the detectionelectrodes Rx in a detection operation Td4.

The following first describes performing the sign selection driving forone detection electrode block RxB(l). As illustrated in FIGS. 9A to 9D,the detection electrode block RxB(l) includes n detection electrodes Rxarranged in the column direction (the Y direction). The n is an integerequal to or greater than 1; in the first embodiment, n is 4. The n is avalue equal to or less than the order d of a square matrix Hv as thecertain sign; in the first embodiment, n is equal to the order d of thesquare matrix Hv and is 4. The four detection electrodes Rx are coupled,via the switch elements SW1, to the data line SGL(l) (refer to FIG. 3)shared among the four detection electrodes Rx. In addition, the ndetection electrodes Rx are coupled to the respective n scan lines GCL.The detection control circuit 11 supplies the drive signal Vs to thedetection electrode Tx. The first selection circuit 14 supplies a scansignal to a scan line GCL corresponding to a detection electrode Rxselected from the detection electrode block RxB(l) and turns on a switchelement SW1 corresponding to the selected detection electrode Rx (afirst selection target). With this operation, the selected detectionelectrode Rx is coupled to the data line SGL(l), and the detectionsignal Sv is output to the second selection circuit 15 from the dataline SGL(l).

When the certain sign is the square matrix Hv and a g-th element on anf-th row as any element thereof is Hv_(fg), the relation between adetection signal Svf output in an f-th detection operation Td based onthe square matrix Hv and a detection signal Si_(g) output from a g-thdetection electrode Rx included in the detection electrode block RxB isrepresented by Expression (1) below. As described in Expression (1), avalue obtained by integrating the detection signals Si_(g) of theselected detection electrodes Rx is output as the detection signal Sv.That is to say, the detection signal Svf is represented by the sum ofthe detection signals Si_(g) output from the selected detectionelectrodes Rx. The f and g are each an integer equal to or greater than1, for example. Although Expression (1) describes an example in whichthe detection electrode Rx is selected based on the sign of the f-th rowof the square matrix Hv in the f-th detection operation Td, thedetection operation Td is not limited thereto; in other words, thedetection operation Td is not necessarily performed in orderly sequencealong the column direction of the matrix.

$\begin{matrix}{{Sv}_{f} = {\sum\limits_{g = 0}^{n}{{Hv}_{fg}{Si}_{g}}}} & (1)\end{matrix}$

A detection signal Sc is determined by computing signals output from thedetection electrodes Rx selected from the detection electrode blockRxB(l) based on the certain sign. The certain sign is defined by thesquare matrix Hv, for example. The square matrix Hv is an Hadamardmatrix and is a square matrix in which “1” or “−1” are included as itselements and any different two rows form an orthogonal matrix. The orderd of the square matrix Hv is indicated by 2^(Na). The Na is an integerequal to or greater than 1; in the first embodiment, the Na is 2 asdescribed by Expression (2) below. The order of an Hadamard matrixindicates the number of elements in the vertical direction of thematrix, for example. In the detection electrode block RxB(l), selectionof the detection electrodes Rx is performed based on the positive andnegative signs of the Hadamard matrix, for example. Consequently, asignal output from the detection electrode block RxB(l) (that is, thesignals output from the selected detection electrodes Rx) is determinedby the positive and negative signs of the Hadamard matrix. The detectionsignal Sv output from the detection electrode block RxB(l) correspondsto the number of a plurality of detection electrodes Rx as the firstselection targets in a first selection operation and the arrangement ofthe detection electrodes Rx as the first selection targets.

$\begin{matrix}{{Hv} = \left\{ \begin{matrix}1 & 1 & 1 & 1 \\1 & {- 1} & 1 & {- 1} \\1 & 1 & {- 1} & {- 1} \\1 & {- 1} & {- 1} & 1\end{matrix} \right)} & (2)\end{matrix}$

The order d of the square matrix Hv is equal to or greater than thenumber (n) of the detection electrodes Rx included in the detectionelectrode block RxB(l). In the example illustrated in FIG. 9A to 9D, forexample, the order d of the square matrix Hv is equal to the number ofthe detection electrodes Rx and is 4.

The following describes an example of the sign selection driving bydividing it into four detection operations: the detection operation Td1,the detection operation Td2, the detection operation Td3, and thedetection operation Td4 as illustrated in FIG. 9A to FIG. 9D. In thisembodiment, the detection operation Td1, the detection operation Td2,the detection operation Td3, and the detection operation Td4 are eitherpositive sign selection operations Tdp1, Tdp2, Tdp3, and Tdp4,respectively, or negative sign selection operations Tdm1, Tdm2, Tdm3,and Tdm4, respectively. In the following description, when there is noneed to separately describe the detection operation Td1, the detectionoperation Td2, the detection operation Td3, and the detection operationTd4, they will be referred to as the detection operation Td. Similarly,when there is no need to separately describe the positive sign selectionoperations Tdp1, Tdp2, Tdp3, and Tdp4, they will be referred to simplyas a positive sign selection operation Tdp. Similarly, when there is noneed to separately describe the negative sign selection operations Tdm1,Tdm2, Tdm3, and Tdm4, they will be referred to simply as a negative signselection operation Tdm.

In the first embodiment, the positive sign selection operation Tdp isperformed as the detection operation Td. In other words, the detectioncontrol circuit 11 (refer to FIG. 1) selects the detection electrodes Rxas the first selection targets in accordance with the selection signalVgclp corresponding to the elements “1” of the square matrix Hv. Thedetection control circuit 11 selects the detection electrodes Rx assecond selection targets that are not included in the detectionelectrodes Rx as the first selection targets among the detectionelectrodes Rx. The detection control circuit 11 supplies the selectionsignal Vgclp to the first selection circuit 14 (refer to FIG. 1), andthe first selection circuit 14 supplies a scan signal based on theselection signal Vgclp to the scan line GCL (refer to FIG. 3).

With this operation, the detection electrodes Rx as the first selectiontargets are caused to be a coupled state with respect to the detectioncircuit 40 (refer to FIG. 1), whereas the detection electrodes Rx as thesecond selection targets are caused to be a non-coupled state withrespect to the detection circuit 40. The coupled state refers to a statein which the selected detection electrodes Rx are coupled to thedetection circuit 40 via the data lines SGL and the second selectioncircuit 15 (refer to FIG. 1). The non-coupled state refers to a state inwhich the selected detection electrodes Rx are not coupled to thedetection circuit 40. In FIGS. 9A to 9D, to easily distinguish the firstselection targets and the second selection targets from each other, thedetection electrodes Rx as the first selection targets are hatched.

A detection signal Svp is output to the detection circuit 40 from thedetection electrode block RxB via one data line SGL and the secondselection circuit 15. The detection signal Svp is a signal obtained byintegrating detection signals Si output from the detection electrodes Rxas the first selection targets selected in accordance with the selectionsignal Vgclp. As described above, the selection signal Vgclp correspondsto the element “1” of the square matrix Hv.

In the first embodiment, in order to obtain the detection signal Svp,the first selection circuit 14 and the second selection circuit 15couple the detection electrodes Rx to the detection circuit 40 anduncouple the detection electrodes Rx from the detection circuit 40 byperforming the positive sign selection operations Tdp1, Tdp2, Tdp3, andTdp4. Thus, the first selection circuit 14 and the second selectioncircuit 15 function as coupling circuits. A selection pattern Cpp1 bythe positive sign selection operation Tdp1, a selection pattern Cpp2 bythe positive sign selection operation Tdp2, a selection pattern Cpp3 bythe positive sign selection operation Tdp3, and a selection pattern Cpp4by the positive sign selection operation Tdp4 are different from eachother. That is to say, the positive sign selection operation Tdpincludes a plurality of selection patterns Cpp indicating which of thedetection electrodes Rx among the detection electrodes Rx included inthe detection electrode block RxB are to be coupled to the detectioncircuit 40. Even when the coupled state and the non-coupled state in anyone of the selection patterns Cpp of the positive sign selectionoperation Tdp (first selection patterns) are inverted, the invertedpattern is not identical to any of the other selection patterns Cppincluded in the positive sign selection operation Tdp. That is to say,the selection patterns Cpp included in the positive sign selectionoperation Tdp do not include any selection patterns causing thedetection electrodes as the first selection targets in any of theselection patterns to be the non-coupled state and causing the detectionelectrodes as the second selection targets therein to be the coupledstate.

The signal computing circuit 44 outputs the detection signal Svp to thestorage circuit 48 to temporarily store therein the detection signal Sv.In other words, a matrix ScX consisting of the detection signals Sc ofall the detection operations Td is equal to HvSiX obtained bymultiplying the square matrix Hv by a matrix SiX consisting of thedetection signals Si output from all the detection electrodes Rxincluded in the detection electrode block RxB. HvSiX is equal to aresult of subtraction of HvmSiX from HvpSiX, HvmSiX being obtained bymultiplying a square matrix Hvm by the matrix SiX, HvpSiX being obtainedby multiplying a square matrix Hvp by the matrix SiX. The square matrixHvm is a matrix obtained by replacing the elements “1” in the squarematrix Hv with 0 and the elements “−1” therein with “1”, and the squarematrix Hvp is a matrix obtained by replacing the elements “−1” in thesquare matrix Hv with 0. HvpSiX corresponds to a matrix SvpX ofdetection signals Svp detected by all the positive sign selectionoperations Tdp. HvmSiX corresponds to a matrix SvmX of detection signalsSvm detected by all the negative sign selection operations Tdm.

When the square matrix Hv the order d of which is 4 is multiplied by thematrix SiX consisting of four detection signals Si (Si₁, Si₂, Si₃, Si₄)of the detection electrodes Rx included in one detection electrode blockRxB, four detection signals Sc (Sc₁, Sc₂, Sc₃, Sc₄) is obtained, asdescribed in Expression (3) below. These four detection signals Sc aredetermined from four detection signals Svp (Svp₁, Svp₂, Svp₃, Svp₄),respectively.

$\begin{matrix}{\begin{pmatrix}{Sc}_{1} \\{Sc}_{2} \\{Sc}_{3} \\{Sc}_{4}\end{pmatrix} = {\begin{pmatrix}1 & 1 & 1 & 1 \\1 & {- 1} & 1 & {- 1} \\1 & 1 & {- 1} & {- 1} \\1 & {- 1} & {- 1} & 1\end{pmatrix}\begin{pmatrix}{Si}_{1} \\{Si}_{2} \\{Si}_{3} \\{Si}_{4}\end{pmatrix}}} & (3)\end{matrix}$

The following describes a method for determining the detection signalsSc (Sc₁, Sc₂, Sc₃, Sc₄) from the four detection signals Svp (Svp₁, Svp₂,Svp₃, Svp₄) as an example. This description describes a case in whichthe detection signals Si are (Si₁, Si₂, Si₃, Si₄)=(1, 7, 3, 2) as anexample. The detection signal Si₁ is a signal output from a detectionelectrode Rx(k). The detection signal Sit is a signal output from adetection electrode Rx(k+1). The detection signal Sia is a signal outputfrom a detection electrode Rx(k+2). The detection signal Si₄ is a signaloutput from a detection electrode Rx(k+3). The sensor 1 outputs onedetection signal Sv obtained by integrating the detection signals Si ofthe detection electrodes Rx selected from one detection electrode blockRxB. The detection circuit 40 calculates the individual detectionsignals Si by computations below.

As illustrated in FIG. 9A, in the positive sign selection operation Tdp1of the detection operation Td1, the detection control circuit 11 (referto FIG. 1) and the first selection circuit 14 select, as the firstselection targets, four detection electrodes Rx(k), Rx(k+1), Rx(k+2),and Rx(k+3) corresponding to the elements “1” on the first row of thesquare matrix Hv. This brings the detection electrodes Rx(k), Rx(k+1),Rx(k+2), and Rx(k+3) into the coupled state. Consequently, fromExpression (3), the detection signal Svp₁ detected by the detectioncircuit 40 is Svp₁=1×1+1×7+1×3+1×2=13.

Next, as illustrated in FIG. 9B, in the positive sign selectionoperation Tdp2 of the detection operation Td2, the detection controlcircuit 11 and the first selection circuit 14 select, as the firstselection targets, the detection electrodes Rx(k) and Rx(k+2)corresponding to the elements “1” on the second row of the square matrixHv. This brings the detection electrodes Rx(k) and Rx(k+2) into thecoupled state. The detection control circuit 11 brings the detectionelectrodes Rx(k+1) and Rx(k+3) as the second selection targets into thenon-coupled state. Consequently, from Expression (3), the detectionsignal Svp₂ detected by the detection circuit 40 isSvp₂=1×1+0×7+1×3+0×2=4.

Next, as illustrated in FIG. 9C, in the positive sign selectionoperation Tdp3 of the detection operation Td3, the detection controlcircuit 11 and the first selection circuit 14 select, as the firstselection targets, the detection electrodes Rx(k) and Rx(k+1)corresponding to the elements “1” on the third row of the square matrixHv. This brings the detection electrodes Rx(k) and Rx(k+1) into thecoupled state. The detection control circuit 11 and the first selectioncircuit 14 bring the detection electrodes Rx(k+2) and Rx(k+3) as thesecond selection targets into the non-coupled state. Consequently, fromExpression (3), the detection signal Svp₃ detected by the detectioncircuit 40 is Svp₃=1×1+1×7+0×3+0×2=8.

Next, as illustrated in FIG. 9D, in the positive sign selectionoperation Tdp4 of the detection operation Td4, the detection controlcircuit 11 and the first selection circuit 14 select, as the firstselection targets, the detection electrodes Rx(k) and Rx(k+3)corresponding to the elements “1” on the fourth row of the square matrixHv. This brings the detection electrodes Rx(k) and Rx(k+3) into thecoupled state. The detection control circuit 11 and the first selectioncircuit 14 bring the detection electrodes Rx(k+1) and Rx(k+2) as thesecond selection targets into the non-coupled state. Consequently, fromExpression (3), the detection signal Svp₄ detected by the detectioncircuit 40 is Svp₄=1×1+0×7+0×3+1×2=3.

A square matrix HvX obtained by multiplying the square matrix Hvdescribed in Expression (2) by a matrix X consisting of a plurality ofdetection signals Si of the detection electrodes Rx included in thedetection electrode block RxB can be transformed into Expression (4).The square matrix Hv can be represented as a result of subtraction ofthe square matrix Hvm from the square matrix Hvp, the square matrix Hvmbeing obtained by replacing the elements “1” and “−1” in the squarematrix Hv with respective elements “0” and “1”, and the square matrixHvp being obtained by replacing the elements “−1” in the square matrixHv with elements “0”. Consequently, the matrix HvX can be represented asa result of subtraction of a matrix HvmX from a matrix Hvpx. The matrixHvX corresponds to the detection signals Sc (Sc₁, Sc₂, Sc₃, Sc₄) asdescribed in Expression (3).

$\begin{matrix}\begin{matrix}{{HvScX} = {{\begin{pmatrix}1 & 1 & 1 & 1 \\1 & {- 1} & 1 & {- 1} \\1 & 1 & {- 1} & {- 1} \\1 & {- 1} & {- 1} & 1\end{pmatrix}\begin{pmatrix}{Si}_{1} \\{Si}_{2} \\{Si}_{3} \\{Si}_{4}\end{pmatrix}} = {{\begin{pmatrix}1 & 1 & 1 & 1 \\1 & 0 & 1 & 0 \\1 & 1 & 0 & 0 \\1 & 0 & 0 & 1\end{pmatrix}\begin{pmatrix}{Si}_{1} \\{Si}_{2} \\{Si}_{3} \\{Si}_{4}\end{pmatrix}} -}}} \\{\begin{pmatrix}0 & 0 & 0 & 0 \\0 & 1 & 0 & 1 \\0 & 0 & 1 & 1 \\0 & 1 & 1 & 0\end{pmatrix}\begin{pmatrix}{Si}_{1} \\{Si}_{2} \\{Si}_{3} \\{Si}_{4}\end{pmatrix}} \\{= {{HvpSiX} - {HvmSiX}}} \\{= {{2\begin{pmatrix}1 & 1 & 1 & 1 \\1 & 0 & 1 & 0 \\1 & 1 & 0 & 0 \\1 & 0 & 0 & 1\end{pmatrix}\begin{pmatrix}{Si}_{1} \\{Si}_{2} \\{Si}_{3} \\{Si}_{4}\end{pmatrix}} - {\begin{pmatrix}1 & 1 & 1 & 1 \\1 & 1 & 1 & 1 \\1 & 1 & 1 & 1 \\1 & 1 & 1 & 1\end{pmatrix}\begin{pmatrix}{Si}_{1} \\{Si}_{2} \\{Si}_{3} \\{Si}_{4}\end{pmatrix}}}} \\{= {{2{HvpSiX}} - {HvbSiX}}} \\{= {{{2\begin{pmatrix}{Svp}_{1} \\{Svp}_{2} \\{Svp}_{3} \\{Svp}_{4}\end{pmatrix}} - \begin{pmatrix}{Svp}_{1} \\{Svp}_{2} \\{Svp}_{3} \\{Svp}_{4}\end{pmatrix}} = {\begin{pmatrix}{{2{Svp}_{1}} - {Svp}_{1}} \\{{2{Svp}_{2}} - {Svp}_{1}} \\{{2{Svp}_{3}} - {Svp}_{1}} \\{{2{Svp}_{4}} - {Svp}_{1}}\end{pmatrix} = \begin{pmatrix}{Sc}_{1} \\{Sc}_{2} \\{Sc}_{3} \\{Sc}_{4}\end{pmatrix}}}}\end{matrix} & (4)\end{matrix}$

As described in Expression (4), the square matrix Hv can be representedas a result of subtraction of a square matrix Hvb with all the elementsbeing “1” from the double of the square matrix Hvp. In other words, thesquare matrix Hvb is a square matrix obtained by having the first row ofthe square matrix Hvp assigned to its all rows. Consequently, the matrixHvX can be represented as a result of subtraction of a matrix HvbX fromthe double of the matrix HvpX. The matrix HvpX corresponds to a matrixconsisting of the detection signals Svp (Svp₁, Svp₂, Svp₃, Svp₄),whereas the matrix HvbX corresponds to a matrix consisting of thedetection signal Svp₁.

The signal computing circuit 44 can determine the four detection signalsSc (Sc₁, Sc₂, Sc₃, Sc₄) from the four detection signals Svp₁, Svp₂,Svp₃, and Svp₄ through a mechanism similar to the description withreference to Expression (4) described above. A signal corresponding to acolumn in which all the rows are the elements “1” in the square matrixHv is the detection signal Svp₁, for example. Consequently, the fourdetection signals Sc (Sc₁, Sc₂, Sc₃, Sc₄) can be respectively determinedby subtracting the detection signal Svp₁ from values obtained bymultiplying the detection signals Svp₁, Svp₂, Svp₃, and Svp₄ by 2. Thefour detection signals Svp₁, Svp₂, Svp₃, and Svp₄ can be represented as(Svp₁, Svp₂, Svp₃, Svp₄)=(13, 4, 8, 3). Consequently, the valuesobtained by multiplying the detection signals Svp₁, Svp₂, Svp₃, and Svp₄by 2 each are (Svp₁, Svp₂, Svp₃, Svp₄)×2=(26, 8, 16, 6). When thedetection signal Svp₁ is subtracted from all of these values, (26, 8,16, 6)−(13, 13, 13, 13)=(13, −5, 3, −7). Thus, the signal computingcircuit 44 successively calculates the four detection signals Sc (Sc₁,Sc₂, Sc₃, Sc₄)=(13, −5, 3, −7) from the detection signals Svp andoutputs the four detection signals Sc (Sc₁, Sc₂, Sc₃, Sc₄) to thestorage circuit 48. That is to say, the signal computing circuit 44functions as an arithmetic unit configured to subtract a basic signal,which is obtained when the detection electrodes Rx are all the firstselection targets, from a double signal, which is obtained by doublingthe signal intensity of one selection pattern. The basic signal is adetection signal when all the detection electrodes Rx included in thedetection electrode block RxB are in the coupled state (the detectionsignal Svp₁), for example.

The signal computing circuit 44 decodes the four detection signals Sc(Sc₁, Sc₂, Sc₃, Sc₄)=(13, −5, 3, −7) by Expression (5) below. The signalcomputing circuit 44 multiplies a matrix consisting of the detectionsignals Sc by the square matrix Hv to calculate decoded detectionsignals Sid (Si₁d, Si₂d, Si₃d, Si₄d)=(4, 28, 12, 8).

$\begin{matrix}{\begin{pmatrix}{{Si}_{1}d} \\{{Si}_{2}d} \\{{Si}_{3}d} \\{{Si}_{4}d}\end{pmatrix} = {\begin{pmatrix}1 & 1 & 1 & 1 \\1 & {- 1} & 1 & {- 1} \\1 & 1 & {- 1} & {- 1} \\1 & {- 1} & {- 1} & 1\end{pmatrix}\begin{pmatrix}{Sc}_{1} \\{Sc}_{2} \\{Sc}_{3} \\{Sc}_{4}\end{pmatrix}}} & (5)\end{matrix}$

The decoded detection signals Sid correspond to values obtained byincreasing the detection signals Si output from the detection electrodesRx d-fold. The d corresponds to the order d of the square matrix Hv andis 4 in this embodiment. Slid is assigned to the detection electrodeRx(k). The decoded detection signal Si₂d is assigned to the detectionelectrode Rx(k+1). The decoded detection signal Si₂d is assigned to thedetection electrode Rx(k+2). The decoded detection signal Si₄d isassigned to the detection electrode Rx(k+3). In accordance with theprotrusion or recess of the finger Fin, the value of the decodeddetection signal Si₁d, Si₂d, Si₃d, or Si₄d of the detection electrode Rxcorresponding to the position of the protrusion or recess changes.

In the sign selection driving described above, the signal computingcircuit 44 performs the decoding processing using Expression (5) for thedetection signals Si (Si₁, Si₂, Si₃, Si₄)=(1, 7, 3, 2), and thus thedecoded detection signals Sid: (Si₁d, Si₂d, Si₃d, Si₄d)=(4, 28, 12, 8),can be obtained. The decoded detection signals Sid are the quadruple ofthe detection signals Si in signal intensity. That is to say, the signalintensity can be obtained four times as great as that obtained bytime-division selection driving, without increasing the voltage of thedrive signal Vs. Consequently, even when noise comes in from theoutside, the noise immunity of the detection apparatus 100 can beimproved by increasing the signal intensity.

In the first embodiment, the detection control circuit 11 switchesbetween the coupled state and the non-coupled state for the detectionelectrodes Rx as the first selection targets selected based on thecertain sign and the detection electrodes Rx as the second selectiontargets that are not included in the first selection targets. Thedetection circuit 40 performs decoding processing on the detectionsignals output from the detection electrodes Rx for each of differentselection patterns Cpp of the detection electrodes Rx.

FIG. 10 is a timing waveform diagram of an operation example of thedetection apparatus according to the first embodiment. As describedabove, the sign selection driving successively performs the positivesign selection operations Tdp. In the example illustrated in FIG. 10,for example, for one detection electrode block RxB(l) (refer to FIGS. 9Ato 9D), the positive sign selection operation Tdp1, the positive signselection operation Tdp2, the positive sign selection operation Tdp3,and the positive sign selection operation Tdp4 are performedsuccessively in this order.

The following describes performing the sign selection driving for aplurality of detection electrode blocks RxB(l), RxB(l+1), RxB(l+2), andRxB(l+3). FIGS. 11A to 11G are diagrams of selection patterns ofdetection electrodes by positive sign selection driving for a pluralityof detection electrodes. FIG. 11A is a diagram of a first selectionpattern in the positive sign selection operation Tdp1. FIG. 11B is adiagram of a second selection pattern in the positive sign selectionoperation Tdp1. FIG. 11C is a third selection pattern in the positivesign selection operation Tdp1. FIG. 11D is a fourth selection pattern inthe positive sign selection operation Tdp1. FIG. 11E is a diagram of aselection pattern in the positive sign selection operation Tdp2. FIG.11F is a diagram of a selection pattern in the positive sign selectionoperation Tdp3. FIG. 11G is a diagram of a selection pattern in thepositive sign selection operation Tdp4.

As illustrated in FIGS. 11A to 11G, the four detection electrode blocksRxB(l), RxB(l+1), RxB(l+2), and RxB(l+3) each have four detectionelectrodes Rx(k), Rx(k+1), Rx(k+2), and Rx(k+3) arranged in the columndirection. The four detection electrode blocks RxB(l), RxB(l+1),RxB(l+2), and RxB(l+3) are arranged at regular intervals in the rowdirection. In the following description, when there is no need toseparately describe the detection electrode blocks RxB(l), RxB(l+1),RxB(l+2), and RxB(l+3), they will be referred to simply as a detectionelectrode block RxB.

A plurality of detection electrodes Rx included in each of the detectionelectrode blocks RxB are coupled to the same data line SGL via therespective switch elements SW1. The four detection electrodes Rxincluded in the detection electrode block RxB(l) are coupled to the dataline SGL(l) via the switch elements SW1, for example.

The second selection circuit 15 includes a plurality of switch elementsSW2. The switch elements SW2 each switch between coupling and uncouplingrespective data line SGL and the detection circuit 40. The switchelements SW2 are coupled to respective switch control lines SWL. Thesecond selection circuit 15 has four switch elements SW2(l), SW2(l+1),SW2(l+2), and SW2(l+3), for example. The switch element SW2(l) is turnedon and off to couple and uncouple the data line SGL(l) to and from thedetection circuit 40 based on a signal from the switch control lineSWL(l). Similarly, the switch elements SW2(l+1), SW2(l+2), and SW2(l+3)switch between coupling and uncoupling the data lines SGL(l+1), (l+2),and (l+3) to and from the detection circuit 40 based on signals from theswitch control lines SWL(l+1), SWL(l+2), and SWL(l+3), respectively. Inthe following description, when there is no need to separately describethe switch elements SW2(l), SW2(l+1), SW2(l+2), and SW2(l+3), they willbe referred to simply as a switch element SW2.

When the positive sign selection operation Tdp is performed, thedetection apparatus 100 performs the positive sign selection operationTdp1 of the detection operation Td1, the positive sign selectionoperation Tdp2 of the detection operation Td2, the positive signselection operation Tdp3 of the detection operation Td3, and thepositive sign selection operation Tdp4 of the detection operation Td4for each of the detection electrode blocks RxB.

The order of performing the positive sign selection operations Tdp1,Tdp2, Tdp3, and Tdp4 for each of the detection electrode blocks RxB isnot limited to a particular order; in the present embodiment, they areperformed as indicated by the drive waveform in FIG. 10.

The following describes an example of a case in which the positive signselection operation Tdp is performed. The detection apparatus 100successively performs the detection operation Td1 for a plurality ofdetection electrode blocks RxB. Specifically, as illustrated in FIG. 10and FIG. 11A, the first selection circuit 14 performs the positive signselection operation Tdp1 of the detection operation Td1 based on theselection signal Vgclp supplied from the first control circuit 114 ofthe counter circuit 116. With this operation, a scan signal is suppliedfrom the first selection circuit 14 to the switch elements SW1 coupledto the detection electrodes Rx as the first selection targets, and thedetection electrodes Rx as the first selection targets are coupled totheir corresponding data line SGL. In this state, as illustrated in FIG.11A, the second selection circuit 15 turns on the switch element SW2(l)and turns off the switch elements SW2(l+1), SW2(l+2), and SW2(l+3) basedon the selection signal Vsel supplied from the second control circuit115 of the counter circuit 116 (refer to FIG. 1). With this operation,the data line SGL(l) coupled to the detection electrode block RxB(l)among the four data lines SGL is coupled to the detection circuit 40,whereas the other data lines SGL are not coupled to the detectioncircuit 40. With this operation, the detection signal Svp₁ is outputfrom the data line SGL(l).

Next, as illustrated in FIG. 10 and FIG. 11B, the second selectioncircuit 15 turns on the switch element SW2(l+1) and turns off the switchelements SW2(l), SW2(l+2), and SW2(l+3) based on the selection signalVsel from the second control circuit 115. With this operation, the dataline SGL(l+1) coupled to the detection electrode block RxB(l+1) iscoupled to the detection circuit 40, whereas the other data lines SGLare not coupled to the detection circuit 40. With this operation, thedetection signal Svp₁ is output from the data line SGL(l+1).

Next, as illustrated in FIG. 10 and FIG. 11C, the second selectioncircuit 15 turns on the switch element SW2(l+2) and turns off the switchelements SW2(l), SW2(l+1), and SW2(l+3) based on a signal from thesecond control circuit 115. With this operation, the data line SGL(l+2)coupled to the detection electrode block RxB(l+2) is coupled to thedetection circuit 40, whereas the other data lines SGL are not coupledto the detection circuit 40. With this operation, the detection signalSvp₁ is output from the data line SGL(l+2).

Next, as illustrate in FIG. 10 and FIG. 11D, the second selectioncircuit 15 turns on the switch element SW2(l+3) and turns off the switchelements SW2(l), SW2(l+1), and SW2(l+2) based on a signal from thesecond control circuit 115. With this operation, the data line SGL(l+3)coupled to the detection electrode block RxB(l+3) is coupled to thedetection circuit 40, whereas the other data lines SGL are not coupledto the detection circuit 40. With this operation, the detection signalSvp₁ is output from the data line SGL(l+3).

Next, as illustrated in FIG. 10, the detection apparatus 100successively performs the detection operation Td2 for the detectionelectrode blocks RxB. Specifically, as illustrated in FIG. 11E, thefirst selection circuit 14 performs the positive sign selectionoperation Tdp2 of the detection operation Td2 based on the selectionsignal Vgclp supplied from the first control circuit 114. With thisoperation, a scan signal is supplied from the first selection circuit 14to the switch elements SW1 coupled to the detection electrodes Rx as thefirst selection targets, and the detection electrodes Rx as the firstselection targets are coupled to their corresponding data line SGL. Inthis state, the second selection circuit 15 turns on the switch elementSW2(l) and turns off the switch elements SW2(l+1), SW2(l+2), andSW2(l+3) based on the selection signal Vsel from the second controlcircuit 115. With this operation, the data line SGL(l) coupled to thedetection electrode block RxB(l) is coupled to the detection circuit 40,whereas the other signal lines SGL are not coupled to the detectioncircuit 40. With this operation, the detection signal Svp₂ is outputfrom the data line SGL(l).

As illustrated in FIG. 10, in the detection operation Td2 as well, in amanner similar to the detection operation Td1, the second selectioncircuit 15 switches the switch elements SW2 to couple the data linesSGL(l), SGL(l+1), SGL(l+2), and SGL(l+3) one by one to the detectioncircuit 40. With this operation, the detection signals Svp₂corresponding to the detection electrode blocks RxB are output to thedetection circuit 40 from the data lines SGL.

Next, as illustrated in FIG. 10, the detection apparatus 100successively performs the detection operation Td3 for the detectionelectrode blocks RxB. Specifically, as illustrated in FIG. 11F, thefirst selection circuit 14 performs the positive sign selectionoperation Tdp3 of the detection operation Td3 based on the selectionsignal Vgclp supplied from the first control circuit 114. With thisoperation, a scan signal is supplied from the first selection circuit 14to the switch elements SW1 coupled to the detection electrodes Rx as thefirst selection targets, and the detection electrodes Rx as the firstselection targets are coupled to their corresponding data line SGL. Inthis state, the second selection circuit 15 turns on the switch elementSW2(l) and turns off the switch elements SW2(l+1), SW2(l+2), andSW2(l+3) based on the selection signal Vsel from the second controlcircuit 115. With this operation, the data line SGL(l) is coupled to thedetection circuit 40, whereas the other data lines SGL are not coupledto the detection circuit 40. With this operation, the detection signalSvp₃ is output from the data line SGL(l).

As illustrated in FIG. 10, in the detection operation Td3 as well, in amanner similar to the detection operation Td1 and the detectionoperation Td2, the second selection circuit 15 switches the switchelements SW2 to couple the data lines SGL(l), SGL(l+1), SGL(l+2), andSGL(l+3) one by one to the detection circuit 40. With this operation,the detection signals Svp₃ corresponding to the detection electrodeblocks RxB are output to the detection circuit 40 from the data linesSGL.

Next, as illustrated in FIG. 10, the detection apparatus 100successively performs the detection operation Td4 for the detectionelectrode blocks RxB. Specifically, as illustrated in FIG. 11G, thefirst selection circuit 14 performs the positive sign selectionoperation Tdp4 of the detection operation Td4 based on the selectionsignal Vgclp supplied from the first control circuit 114. With thisoperation, a scan signal is supplied from the first selection circuit 14to the switch elements SW1 coupled to the detection electrodes Rx as thefirst selection targets, and the detection electrodes Rx as the firstselection targets and the data lines SGL are coupled to each other. Inthis state, the second selection circuit 15 turns on the switch elementSW(l) and turns off the switch elements SW2(l+1), SW2(l+2), and SW2(l+3)based on the selection signal Vsel from the second control circuit 115.With this operation, the data line SGL(l) is coupled to the detectioncircuit 40, whereas the other data lines SGL are not coupled to thedetection circuit 40. With this operation, the detection signal Svp₄ isoutput from the data line SGL(l).

As illustrated in FIG. 10, in the detection operation Td4 as well, in amanner similar to the detection operation Td1, the detection operationTd2, and the detection operation Td3, the second selection circuit 15switches the switch elements SW2 to couple the data lines SGL(l),SGL(l+1), SGL(l+2), and SGL(l+3) one by one to the detection circuit 40.The first selection circuit 14 performs the positive sign selectionoperation Tdp4 of the detection operation Td4 for the detectionelectrode blocks RxB coupled to the detection circuit 40 via the datalines SGL. With this operation, the detection signals Svp₄ correspondingto the detection electrode blocks RxB are output to the detectioncircuit 40 from the data lines SGL.

The signal computing circuit 44 (refer to FIG. 1) calculates the fourdetection signals Sc (Sc₁, Sc₂, Sc₃, Sc₄) for each of the detectionelectrode blocks RxB. When the positive sign selection operation Tdp isperformed, the detection signal Sc₁ is calculated from the detectionsignal Svp₁. The detection signal Sc₂ is calculated from the detectionsignal Svp₁ and the detection signal Svp₂. The detection signal Sc₃ iscalculated from the detection signal Svp₁ and the detection signal Svp₃.The detection signal Sc₄ is calculated from the detection signal Svp₁and the detection signal Svp₄. The signal computing circuit 44 outputs,to the storage circuit 48, the four detection signals Sc (Sc₁, Sc₂, Sc₃,Sc₄) for each of the detection electrode blocks RxB. The signalcomputing circuit 44 decodes, by Expression (5), the four detectionsignals Sc (Sc₁, Sc₂, Sc₃, Sc₄) for each of the detection electrodeblocks RxB.

In each of the detection electrode blocks RxB, the decoded detectionsignal Si₁d corresponds to the detection electrode Rx(k). The decodeddetection signal Si₂d corresponds to the detection electrode Rx(k+1).The decoded detection signal Siad corresponds to the detection electrodeRx(k+2). The decoded detection signal Si₄ d corresponds to the detectionelectrode Rx(k+3). When the protrusion or recess of the finger Fin is incontact with or proximity to the detection electrode block RxB, thevalue of the decoded detection signal Si₂d, Si₃d, or Si₄ d of thedetection electrode Rx corresponding to the contact or proximityposition changes.

The coordinates extraction circuit 45 can determine the coordinates ofthe detection electrode Rx, where the recess or protrusion of the fingerFin is in contact to or proximity with, among the detection electrodesRx in each of the detection electrode blocks RxB based on the decodeddetection signals Si₁d, Si₂d, Si₃d, and Si₄d. The coordinates extractioncircuit 45 outputs the detected coordinates to the combination circuit46. The combination circuit 46 combines the decoded detection signalsSi₁d, Si₂d, Si₃d, and Si₄ d to generate two-dimensional informationindicating the shape of an object being in contact or proximity. Thecombination circuit 46 outputs the two-dimensional information in theform of the output signal Vout of the detection circuit 40. Thecombination circuit 46 may generate an image based on thetwo-dimensional information and output its image information as theoutput signal Vout. The detection circuit 40 may output, as the outputsignal Vout, the coordinates that are output by the coordinatesextraction circuit 45. The detection circuit 40 may not include thecoordinates extraction circuit 45 and the combination circuit 46 and mayoutput each of the decoded detection signals Si₁d, Si₂d, Si₃d, and Si₄ das the output signal Vout.

As described above, in the first embodiment, the detection signals Sid(the detection signals Si₁d, Si₂d, Si₃d, and Si₄d) of the respectivedetection electrodes Rx included in the detection electrode block RxBcan be obtained from the detection signals Svp obtained only by thepositive sign selection operation Tdp as one of the two sign selectionoperations based on a certain sign: the positive sign selectionoperation Tdp and the negative sign selection operation Tdm. Thus, thedetection signals Sid of the respective detection electrodes Rx includedin each of the detection electrode blocks RxB can be output with fewerselection patterns than a case in which both the positive sign selectionoperation Tdp and the negative sign selection operation Tdm areperformed.

Performing only the positive sign selection operation Tdp as thedetection operation Td can reduce a time required for completing oneframe of the detection operation Td and also reduce the amount of datathat the storage circuit 48 is required to hold until one frame of thedetection operation Td is completed. Consequently, requirements for thedetection circuit 40 in processing capability, processing time, andstorage capacity can be reduced, and both a reduction in loads and animprovement in accuracy can be achieved. The one frame of the detectionoperation Td corresponds to a period for the detection operation Td ofthe same selection pattern to be performed for one detection electrodeblock RxB and indicates a period from when the detection operation Td1is performed for the detection electrode block RxB(l) until when thedetection operation Td1 is next performed for the detection electrodeblock RxB(l), for example. The one frame of the detection operation Tdmay indicate a period for the positive sign selection operations Tdp ofall the selection patterns to be completed for one detection electrodeblock RxB. All the selection patterns are selection patterns the numberof which is equal to or less than the order d of the square matrix Hvcorresponding to the certain sign and are, in this embodiment, the fourselection patterns (Cpp1, Cpp2, Cpp3, Cpp4) corresponding to the order dof the square matrix Hv, for example. The one frame may indicate aperiod for these positive sign selection operations Tdp1, Tdp2, Tdp3,and Tdp4 to be completed.

Although the first embodiment describes a case in which the number n ofthe detection electrodes Rx included in the detection electrode blockRxB(l) is four, the number of the detection electrodes Rx is not limitedthereto and may be two, three, or five or more. The order d of thesquare matrix Hv is not limited to 4 either and may be 2, 3, or 5 ormore. The order d of the square matrix Hv is equal to or greater thanthe number n of the detection electrodes Rx included in the detectionelectrode block RxB(l).

The first embodiment describes that the shape and fingerprint of thefinger Fin is detected by the detection apparatus 100. However, theobject to be detected by the detection apparatus 100 is not limited tothe finger Fin. The object to be detected by the detection apparatus 100is only required to be an object forming capacitance between the objectand the detection electrode Rx; a protrusion or recess of a palm or afoot or the like may be detected, for example. The detection apparatus100 detects a capacitance change by the protrusion or recess of a palmto detect the shape and palm print of the palm, for example.

As illustrated in FIG. 4, a height h3 of the detection electrode Tx fromthe one face 101 a is greater than a height h1 of the detectionelectrode Rx from the one face 101 a. Further, as illustrated in FIG. 4,the height h3 of the detection electrode Tx from the one face 101 a isgreater than a height h2 of an insulating resin 33 from the one face 101a. With this structure, when the finger Fin approaches the detectionelectrode Rx, it is easy for the finger Fin to be naturally in contactwith the detection electrode Tx.

The detection electrodes Rx are arranged in a first direction and asecond direction crossing the first direction. The first direction isthe row direction, whereas the second direction is the column direction,for example. With this structure, the resolution of detection of theshape and fingerprint of the finger Fin can be increased.

First Modification of First Embodiment

Although the first embodiment describes a case in which the switchelements SW2 of the second selection circuit 15 are successivelyselected in a state where the detection electrode block RxB is coupledto the data line SGL in the same selection pattern Cpp by the firstselection circuit 14 as illustrated in FIG. 10, the order of driving isnot limited thereto. FIG. 12 is a diagram of drive waveformscorresponding to a first modification of the first embodiment.Descriptions of matters common to the first embodiment will be omitted.

In the first modification of the first embodiment, with the switchelement SW2(l) of the second selection circuit 15 coupled to thedetection circuit 40 based on a signal from the second control circuit115 to the switch control line SWL(l), the first control circuit 114 andthe first selection circuit 14 successively perform the positive signselection operations Tdp1, Tdp2, Tdp3, and Tdp4. Next, with the switchelement SW2(l+1) of the second selection circuit 15 coupled to thedetection circuit 40 based on a signal from the second control circuit115 to the switch control line SWL(l+1), the first control circuit 114and the first selection circuit 14 successively perform the positivesign selection operations Tdp1, Tdp2, Tdp3, and Tdp4. Similarly, withthe switch element SW2(l+2) of the second selection circuit 15 coupledto the detection circuit 40, the first control circuit 114 and the firstselection circuit 14 successively perform the positive sign selectionoperations Tdp1, Tdp2, Tdp3, and Tdp4; with the switch element SW2(l+3)of the second selection circuit 15 coupled to the detection circuit 40,the first control circuit 114 and the first selection circuit 14successively perform the positive sign selection operations Tdp1, Tdp2,Tdp3, and Tdp4. In other words, after an operation similar to thatillustrated in FIG. 11A is performed, operations similar to thoseillustrated in FIG. 11E, FIG. 11F, and FIG. 11G are performed, and thenthe operation of FIG. 11B is performed.

As described in Expression (4) and Expression (5), to detect thedetection signals Sc and the decoded detection signals Sid, it isnecessary to obtain all the detection signals Svp (Svp₁, Svp₂, Svp₃,Svp₄). According to the first modification of the first embodiment,after all the detection signals Svp (Svp₁, Svp₂, Svp₃, Svp₄) of onedetection electrode block RxB are obtained based on all the positivesign selection operations Tdp (Tdp1, Tdp2, Tdp3, Tdp4), the positivesign selection operations Tdp for the next detection electrode block RxBstart. Consequently, without waiting for the completion of the positivesign selection operations Tdp by another detection electrode block RxB,when all the positive sign selection operations Tdp are completed forone detection electrode block RxB, the signal computing circuit 44 canperform the computation processing described in Expression (4) andExpression (5). Consequently, the signal computing circuit 44 canperform computation processing for a previous detection electrode blockRxB in parallel with an operation of performing the positive signselection operations Tdp for another detection electrode block RxB andacquiring the detection signals Svp thereof; this can reduce a timeuntil the output signal Vout is output.

After the computation processing described in Expression (4) and thecomputation processing described in Expression (5) are performed, itbecomes unnecessary for the detection signals Svp to be held in thestorage circuit 48. This can reduce the amount of data that the storagecircuit 48 is required to hold as compared with a case in which all thedetection signals Svp are held for all the detection electrode blocksRxB.

Second Embodiment

Although the first embodiment describes a case in which the positivesign selection operation Tdp is performed among the positive signselection operation Tdp and the negative sign selection operation Tdmbased on the certain sign illustrated in FIGS. 9A to 9D, the operationto be performed is not limited thereto. In a second embodiment, thefollowing describes a case in which the negative sign selectionoperation Tdm is performed. Descriptions of matters common to the firstembodiment will be omitted.

As illustrated in FIGS. 9A to 9D, in the negative sign selectionoperation Tdm, the detection control circuit 11 selects the detectionelectrodes Rx as the first selection targets in accordance with theselection signal Vgclm corresponding to the elements “−1” of the squarematrix Hv. The detection control circuit 11 selects the detectionelectrodes Rx as the second selection targets that are not included inthe detection electrodes Rx as the first selection targets among thedetection electrodes Rx. The detection control circuit 11 supplies theselection signal Vgclm to the first selection circuit 14 (refer to FIG.1), and the first selection circuit 14 supplies a scan signal based onthe selection signal Vgclm to the scan line GCL (refer to FIG. 3). Withthis operation, the detection electrodes Rx as the first selectiontargets are in the coupled state, whereas the detection electrodes Rx asthe second selection targets are in the non-coupled state. In onedetection operation Td, the detection electrodes Rx as the firstselection targets in the positive sign selection operation Tdpcorrespond to the detection electrodes Rx as the second selectiontargets in the negative sign selection operation Tdm. That is to say, inone detection operation Td, the negative sign selection operation Tdm isan operation with selection patterns obtained by inverting the selectionpatterns Cpp of the detection electrodes Rx of the positive signselection operation Tdp.

The detection signals Svm (Svm₁, Svm₂, SVM₃, Svm₄) are output to thedetection circuit 40 from the detection electrode block RxB via one dataline SGL and the second selection circuit 15. The detection signals Svmare signals obtained by integrating the detection signals Si output fromthe detection electrodes Rx as the first selection targets selected inaccordance with the selection signal Vgclm. As described above, theselection signal Vgclm corresponds to the elements “−1” of the squarematrix Hv.

In the second embodiment, in order to obtain the detection signals Svm,the first selection circuit 14 and the second selection circuit 15 causethe detection electrodes Rx and the detection circuit 40 to be in thecoupled state and the non-coupled state by performing the negative signselection operations Tdm1, Tdm2, Tdm3, and Tdm4. Thus, the firstselection circuit 14 and the second selection circuit 15 function ascoupling circuits. A selection pattern Cpm1 by the negative signselection operation Tdm1, a selection pattern Cpm2 by the negative signselection operation Tdm2, a selection pattern Cpm3 by the negative signselection operation Tdm3, and a selection pattern Cpm4 by the negativesign selection operation Tdm4 are different from each other. That is tosay, the negative sign selection operation Tdm includes a plurality ofselection patterns of the detection electrodes Rx and the detectioncircuit 40 in which the detection electrodes Rx as the first selectiontargets among a plurality of detection electrodes Rx are caused to becoupled to the detection circuit 40, that is, the coupled state; and thedetection electrodes Rx as the second selection targets that are notincluded in the first selection targets are caused to be uncoupled fromthe detection circuit 40, that is, the non-coupled state. Even when thecoupled state and the non-coupled state in any one of selection patternsCpm of the negative sign selection operation Tdm (second selectionpatterns) are inverted, the inverted pattern is not identical to any ofthe other selection patterns Cpm included in the negative sign selectionoperation Tdm. That is to say, the selection patterns included in thenegative sign selection operation Tdm do not include any selectionpatterns causing the detection electrodes as the first selection targetsin any one of the selection patterns to be the non-coupled state andcausing the detection electrodes as the second selection targets thereinto be the coupled state.

The relation between the first selection targets and the secondselection targets is reversed between the positive sign selectionoperation Tdp1 and the negative sign selection operation Tdm1. Therelation between the first selection targets and the second selectiontargets is reversed between the positive sign selection operation Tdp2and the negative sign selection operation Tdm2. The relation between thefirst selection targets and the second selection targets is reversedbetween the positive sign selection operation Tdp3 and the negative signselection operation Tdm3. The relation between the first selectiontargets and the second selection targets is reversed between thepositive sign selection operation Tdp4 and the negative sign selectionoperation Tdm4. That is to say, the relation between the first selectiontargets and the second selection targets in a plurality of selectionpatterns (the selection patterns Cpp) included in one (the positive signselection operation Tdp) of two operations is obtained by reversing therelation between the first selection targets and the second selectiontargets in a plurality of selection patterns (the selection patternsCpm) included in the other (the negative sign selection operation Tdm).

FIG. 13 is a diagram of drive waveforms of the detection apparatus inthe second embodiment. As illustrated in FIG. 13, the detectionapparatus 100 performs a standard sign selection operation Tdb inaddition to the negative sign selection operation Tdm. Specifically, inthe standard sign selection operation Tdb, the first control circuit 114outputs a selection signal Vgclb for selecting all the detectionelectrodes Rx included in the detection electrode block RxB as the firstselection targets. The first selection circuit 14, based on theselection signal Vgclb, supplies a scan signal to the scan lines GCLcoupled to the switch elements SW1 of all the detection electrodes Rxincluded in the detection electrode block RxB. Via the switch elementsSW1 to which the scan signal has been supplied, all the detectionelectrodes Rx included in the detection electrode block RxB are coupledto a data line SGL shared among the all the detection electrodes Rxtherein, and a detection signal Svb is output.

The standard sign selection operation Tdb corresponds to the positivesign selection operation Tdp1, for example. In other words, a selectionpattern Cpb of the standard sign selection operation Tdb corresponds toan inverted pattern of the selection pattern Cpm1 of the negative signselection operation Tdm. The detection signal Svb corresponds to thedetection signal Svpl. Consequently, in the detection apparatus 100,except for the selection pattern Cpb of the standard sign selectionoperation Tdb, even when the coupled state and the non-coupled state inany one of the selection patterns Cpm (Cpm1, Cpm2, Cpm3, Cpm4) of thenegative sign selection operation Tdm are inverted, the inverted patternis not identical to any of the other selection patterns Cpm included inthe negative sign selection operation Tdm.

As described in Expression (6), the square matrix Hv can be representedas a result of subtraction of the double of the square matrix Hvm fromthe square matrix Hvb with all the elements being “1”. Consequently, amatrix HvScX can be represented as a result of subtraction of the doubleof the matrix HvmSiX from a matrix HvbSiX. The matrix HvmSiX correspondsto a matrix consisting of the detection signals Svm (Svm₁, Svm₂, Svm₃,Svm₄), whereas the matrix HvbSiX corresponds to a matrix consisting ofthe detection signal Svb.

$\begin{matrix}{{{HvScX} = {{\begin{pmatrix}1 & 1 & 1 & 1 \\1 & {- 1} & 1 & {- 1} \\1 & 1 & {- 1} & {- 1} \\1 & {- 1} & {- 1} & 1\end{pmatrix}\begin{pmatrix}{Si}_{1} \\{Si}_{2} \\{Si}_{3} \\{Si}_{4}\end{pmatrix}} = {{\begin{pmatrix}1 & 1 & 1 & 1 \\1 & 0 & 1 & 0 \\1 & 1 & 0 & 0 \\1 & 0 & 0 & 1\end{pmatrix}\begin{pmatrix}{Si}_{1} \\{Si}_{2} \\{Si}_{3} \\{Si}_{4}\end{pmatrix}} -}}}\mspace{115mu}} & {(7)} \\{\begin{pmatrix}0 & 0 & 0 & 0 \\0 & 1 & 0 & 1 \\0 & 0 & 1 & 1 \\0 & 1 & 1 & 0\end{pmatrix}\begin{pmatrix}{Si}_{1} \\{Si}_{2} \\{Si}_{3} \\{Si}_{4}\end{pmatrix}} & \\{= {{HypSiX} - {HvmSiX}}} & \\{= {{\begin{pmatrix}1 & 1 & 1 & 1 \\1 & 1 & 1 & 1 \\1 & 1 & 1 & 1 \\1 & 1 & 1 & 1\end{pmatrix}\begin{pmatrix}{Si}_{1} \\{Si}_{2} \\{Si}_{3} \\{Si}_{4}\end{pmatrix}} - {2\begin{pmatrix}0 & 0 & 0 & 0 \\0 & 1 & 0 & 1 \\0 & 0 & 1 & 1 \\0 & 1 & 1 & 0\end{pmatrix}\begin{pmatrix}{Si}_{1} \\{Si}_{2} \\{Si}_{3} \\{Si}_{4}\end{pmatrix}}}} & {(6)} \\{= {{HvbSiX} - {2{HvmSiX}}}} & \\{= {{\begin{pmatrix}{Svb} \\{Svb} \\{Svb} \\{Svb}\end{pmatrix} - {2\begin{pmatrix}{Svm}_{1} \\{Svm}_{2} \\{Svm}_{3} \\{Svm}_{4}\end{pmatrix}}} = \begin{pmatrix}{Sc}_{1} \\{Sc}_{2} \\{Sc}_{3} \\{Sc}_{4}\end{pmatrix}}} & \end{matrix}$

The signal computing circuit 44 can determine the four detection signalsSc (Sc₁, Sc₂, Sc₃, Sc₄) from the four detection signals Svm₁, Svm₂,SVM₃, and SVM₄ through a mechanism similar to that described withreference to Expression (6). Specifically, when the detection signals Siof the respective detection electrodes Rx included in the detectionelectrode block RxB are (Si₁, Si₂, Si₃, Si₄)=(1, 7, 3, 2), the detectionsignal Svb becomes 13 (Svb=1+7+3+2=13). The detection signals Svm are(Svm₁, Svm₂, Svm₃, Svm₄)=(0, 7+2=9, 3+2=5, 7+3=10). The four detectionsignals Sc (Sc₁, Sc₂, Sc₃, Sc₄) can be determined by subtracting thevalues obtained by multiplying the detection signals Svm₁, Svm₂, Svm₃,and Svm₄ by 2 each from the detection signal Svb. Consequently, as inthe first embodiment, the detection signals Sc are (Sc₁, Sc₂, Sc₃,Sc₄)=(13−0×2=13, 13−9×2=−5, 13−5×2=3, 13−10×2=−7). Thus, the signalcomputing circuit 44 successively calculates the detection signals Scfrom the detection signals Svm and outputs the detection signals Sc tothe storage circuit 48. That is to say, the signal computing circuit 44is a computing circuit subtracting a double signal obtained by doublingthe signal intensity of one selection pattern from a basic signal whenthe detection electrodes Rx are all the first selection targets.

The signal computing circuit 44, as in the first embodiment, calculatesthe decoded detection signals Sid (Si₃d, Si₂d, Si₃d, Si₄d)=(4, 28, 12,8) based on Expression (5). The decoded detection signals Sid correspondto values obtained by increasing the detection signals Si output fromthe detection electrodes Rx d-fold. The d corresponds to the order ofthe square matrix Hv and is 4 in this embodiment. The value of thedecoded detection signal Sid of the detection electrode Rx correspondingto the position of the protrusion or recess of the finger Fin changes inaccordance with the recess or protrusion.

In the sign selection driving described above, the decoding processingusing Expression (5) is performed for the detection signals Si (Si₁,Si₂, Si₃, Si₄)=(1, 7, 3, 2) by the signal computing circuit 44, and thusthe decoded detection signals Sid: (Sl₁d, Si₂d, Si₃d, Si₄d)=(4, 28, 12,8), can be obtained. The decoded detection signals Sid are the quadrupleof the detection signals Si in signal intensity. That is to say, thesignal intensity can be obtained four times as great as that obtained intime-division selection driving, without increasing the voltage of thedrive signal Vs. Consequently, even when noise comes in from theoutside, the noise immunity of the detection apparatus 100 can beimproved by increasing the signal intensity.

The following describes performing the sign selection driving for thedetection electrode blocks RxB(l), RxB(l+1), RxB(l+2), and RxB(l+3).FIGS. 14A to 14H are diagrams of selection patterns of detectionelectrodes by negative sign selection driving for the detectionelectrode blocks. FIG. 14A is a diagram of a first selection pattern inthe negative sign selection operation Tdm1. FIG. 14B is a diagram of asecond selection pattern in the negative sign selection operation Tdm1.FIG. 14C is a diagram of a third selection pattern in the negative signselection operation Tdm1. FIG. 14D is a diagram of a fourth selectionpattern in the negative sign selection operation Tdm1. FIG. 14E is adiagram of a selection pattern in the standard sign selection operationTdb. FIG. 14F is a diagram of a selection pattern in the negative signselection operation Tdm2. FIG. 14G is a diagram of a selection patternin the negative sign selection operation Tdm3. FIG. 14H is a diagram ofa selection pattern in the negative sign selection operation Tdm4.

As illustrated in FIG. 13 and FIGS. 14A to 14H, in the detectionapparatus 100 of the second embodiment, in a state where the detectionelectrodes Rx are caused to be the coupled state by the first selectioncircuit 14 in one of the selection patterns Cpm and the selectionpattern Cpb in accordance with the selection signal Vgclm or a selectionsignal Vgclb from the first control circuit 114, the second selectioncircuit 15 successively selects the data lines SGL to be coupled to thedetection circuit 40 in accordance with a signal from the second controlcircuit 115.

The detection apparatus 100 of the second embodiment performs thenegative sign selection operation Tdm1 as the detection operation Td1.Specifically, based on the selection signal Vgclm from the first controlcircuit 114, the first selection circuit 14 supplies a scan signalcorresponding to the selection pattern Cpm1 to the scan line GCL. Asillustrated in FIG. 14A, the second selection circuit 15 couples thedata line SGL(l) to the detection circuit 40 in accordance with theselection signal Vsel from the second control circuit 115 to output thedetection signal Svm₁ from the detection electrode block RxB(l) to thedetection circuit 40. Similarly, as illustrated in FIG. 14B, FIG. 14C,and FIG. 14D, the second selection circuit 15 successively couples thedata lines SGL(l+1), SGL(l+2), and SGL(l+3) to the detection circuit 40to output the detection signals Svm₁ from the detection electrode blocksRxB(l+1), RxB(l+2), and RxB(l+3) to the detection circuit 40.

Next, the detection apparatus 100 of the second embodiment performs thenegative sign selection operation Tdm2 as the detection operation Td2.Specifically, based on the selection signal Vgclm from the first controlcircuit 114, the first selection circuit 14 supplies a scan signalcorresponding to the selection pattern Cpm2 to the scan line GCL. Asillustrated in FIG. 14E, the second selection circuit 15 couples thedata line SGL(l) to the detection circuit 40 in accordance with theselection signal Vsel from the second control circuit 115 to output thedetection signal Svm₂ from the detection electrode block RxB(l) to thedetection circuit 40. Similarly, the second selection circuit 15successively couples the data lines SGL(l+1), SGL(l+2), and SGL(l+3) tothe detection circuit 40 to output the detection signals Svm₂ from thedetection electrode blocks RxB(l+1), RxB(l+2), and RxB(l+3) to thedetection circuit 40.

Next, the detection apparatus 100 of the second embodiment performs thenegative sign selection operation Tdm3 as the detection operation Td3.Specifically, based on the selection signal Vgclm from the first controlcircuit 114, the first selection circuit 14 supplies a scan signalcorresponding to the selection pattern Cpm3 to the scan line GCL. Asillustrated in FIG. 14F, the second selection circuit 15 couples thedata line SGL(l) to the detection circuit 40 in accordance with theselection signal Vsel from the second control circuit 115 to output thedetection signal Svm₃ from the detection electrode block RxB(l) to thedetection circuit 40. Similarly, the second selection circuit 15successively couples the data lines SGL(l+1), SGL(l+2), and SGL(l+3) tothe detection circuit 40 to output the detection signals Svm₃ from thedetection electrode blocks RxB(l+1), RxB(l+2), and RxB(l+3) to thedetection circuit 40.

Next, the detection apparatus 100 of the second embodiment performs thenegative sign selection operation Tdm4 as the detection operation Td4.Specifically, based on the selection signal Vgclm from the first controlcircuit 114, the first selection circuit 14 supplies a scan signalcorresponding to the selection pattern Cpm4 to the scan line GCL. Asillustrated in FIG. 14G, the second selection circuit 15 couples thedata line SGL(l) to the detection circuit 40 in accordance with theselection signal Vsel from the second control circuit 115 to output thedetection signal SVM4 from the detection electrode block RxB(l) to thedetection circuit 40. Similarly, the second selection circuit 15successively couples the data lines SGL(l+1), SGL(l+2), and SGL(l+3) tothe detection circuit 40 to output the detection signals SVM4 from thedetection electrode blocks RxB(l+1), RxB(l+2), and RxB(l+3) to thedetection circuit 40.

Further, the detection apparatus 100 performs the standard signselection operation Tdb as a detection operation Td5. Specifically,based on the selection signal Vgclb from the first control circuit 114,the first selection circuit 14 supplies a scan signal corresponding tothe selection pattern Cpb to the scan line GCL. As illustrated in FIG.14H, the second selection circuit 15 couples the data line SGL(l) to thedetection circuit 40 in accordance with a signal from the second controlcircuit 115 to output the detection signal Svb from the detectionelectrode block RxB(l) to the detection circuit 40. Similarly, thesecond selection circuit 15 successively couples the data linesSGL(l+1), SGL(l+2), and SGL(l+3) to the detection circuit 40 to outputthe detection signals Svb from the detection electrode blocks RxB(l+1),RxB(l+2), and RxB(l+3) to the detection circuit 40.

The signal computing circuit 44 of the detection circuit 40 generatesdetection signals Svc (Svc₁, Svc₂, Svc₃, Svc₄) based on the acquireddetection signals Svm (Svm₁, Svm₂, Svm₃, Svm₄) and the detection signalSvb, based on Expression (6). Further, the detection signals Svc aredecoded based on Expression (5) to generate detection signals Sid (Si₃d,Si₃d, Si₃d, Si₄d). The detection circuit 40 outputs the output signalVout based on the detection signals Sid (Sl₁d, Si₃d, Si₃d, Si₄d).

As described above, in the second embodiment, the detection signals Sid(the detection signals Sl₁d, Si₃d, Si₃d, and Si₄d) of the respectivedetection electrodes Rx included in the detection electrode block RxBcan be obtained from the detection signals Svm and the detection signalSvb obtained only by the standard sign selection operation Tdb and thenegative sign selection operation Tdm that is one of the two signselection operations based on a certain sign: the positive signselection operation Tdp and the negative sign selection operation Tdm.Thus, the detection signals Sid of the respective detection electrodesRx included in each of the detection electrode blocks RxB can be outputwith fewer selection patterns than a case in which both the positivesign selection operation Tdp and the negative sign selection operationTdm are performed.

First Modification of Second Embodiment

FIG. 15 is a diagram of drive waveforms corresponding to a firstmodification of the second embodiment. Descriptions of matters common tothe first embodiment will be omitted. In the second embodiment, thestandard selection operation Tdb is performed after the negative signselection operation Tdm; however, the sequence of the operations is notlimited thereto. As illustrated in FIG. 15, for example, the standardselection operation Tdb may be performed prior to the negative signselection operation Tdm. The negative sign selection operation Tdm1 isthe selection pattern Cpm1 by which all the detection electrodes Rxincluded in the detection electrode block RxB are caused to be uncoupledfrom the data line SGL. For this reason, the detection signal Svm₁ inthe selection pattern Cpm1 can be regarded as zero. Consequently, asillustrated in FIG. 15, the negative sign selection operation Tdm1 isnot necessarily performed.

As described above, the standard sign selection operation Tdb isperformed in place of the negative sign selection operation Tdm1,whereby the detection signals Sid can be acquired by the detectionoperations Td of the same number of times as that of the firstembodiment.

Second Modification of Second Embodiment

Although the second embodiment describes a case in which each of theswitch elements SW2 of the second selection circuit 15 is successivelyselected with the first selection circuit 14 coupled to the data lineSGL in the same selection pattern Cpp for its respective detectionelectrode block RxB as illustrated in FIG. 13, the order of driving isnot limited to this embodiment. FIG. 16 is a diagram of drive waveformscorresponding to a second modification of the second embodiment.Descriptions of matters common to the second embodiment will be omitted.

In the second modification of the second embodiment, with the switchelement SW2(l) of the second selection circuit 15 coupled to thedetection circuit 40 based on the selection signal Vsel from the secondcontrol circuit 115 to the switch control line SWL(l), the first controlcircuit 114 and the first selection circuit 14 successively perform thestandard selection operation Tdb and the negative sign selectionoperations Tdm2, Tdm3, and Tdm4. Next, with the switch element SW2(l+1)of the second selection circuit 15 coupled to the detection circuit 40based on the selection signal Vsel from the second control circuit 115to the switch control line SWL(l+1), the first control circuit 114 andthe first selection circuit 14 successively perform the standardselection operation Tdb and the negative sign selection operations Tdm2,Tdm3, and Tdm4. Similarly, with the switch element SW2(l+2) of thesecond selection circuit 15 coupled to the detection circuit 40, thefirst control circuit 114 and the first selection circuit 14successively perform the standard selection operation Tdb and thenegative sign selection operations Tdm2, Tdm3, and Tdm4; with the switchelement SW2(l+3) of the second selection circuit 15 coupled to thedetection circuit 40, the first control circuit 114 and the firstselection circuit 14 successively perform the standard selectionoperation Tdb and the negative sign selection operations Tdm2, Tdm3, andTdm4. In other words, after performing a detection operation similar tothat illustrated in FIG. 14H, the detection apparatus 100 performsdetection operations similar to those illustrated in FIG. 14E, FIG. 14F,and FIG. 14G, and then couples the switch element SW2(l+1) to thedetection circuit 40 to perform the standard selection operation Tdb andthen perform a detection operation similar to FIG. 14B.

As described in Expression (6) and Expression (5), to detect thedetection signals Sc and the decoded detection signals Sid, it isnecessary to obtain the detection signal Svb and all the detectionsignals Svm (Svm₂, Svm₃, Svm₄) except the detection signal Svm₁, whichcan be regarded as zero. According to the second modification of thesecond embodiment, after the detection signals Svm₂, Svm₃, and Svm₄ andthe detection signal Svb of one detection electrode block RxB areobtained based on the negative sign detection operations Tdm2, Tdm3, andTdm4 and the standard selection operation Tdb, the standard selectionoperation Tdb and the negative sign selection operations Tdm for thenext detection electrode block RxB start. Consequently, without waitingfor the completion of the standard selection operation Tdb and thenegative sign selection operations Tdm by another detection electrodeblock RxB, when the standard selection operation Tdb and the negativesign selection operations Tdm necessary for one detection electrodeblock RxB are completed, the signal computing circuit 44 can perform thecomputation processing described in Expression (6) and Expression (5).Consequently, the signal computing circuit 44 can perform computationprocessing for a previous detection electrode block RxB in parallel withan operation of performing the standard selection operation Tdb and thenegative sign selection operations Tdm for another detection electrodeblock RxB and acquiring the detection signals Svm and the detectionsignal Svb thereof; this can reduce a time until the output signal Voutis output.

After the computation processing described in Expression (6) and thecomputation processing described in Expression (5) are performed, itbecomes unnecessary for the detection signals Svm and the detectionsignal Svb to be held in the storage circuit 48. This can reduce theamount of data that the storage circuit 48 is required to hold ascompared with a case in which all the detection signals Svm and thedetection signals Svb are held for all the detection electrode blocksRxB.

Third Embodiment

Although the first embodiment and the second embodiment describes a casein which only either the positive sign selection operation Tdp or thenegative sign selection operation Tdm is performed, the operation to beperformed is not limited thereto. The coupling circuit may have a firstmode of performing either the first embodiment or the second embodimentand a second mode of performing both the positive sign selectionoperation Tdp and the negative sign selection operation Tdm.Descriptions common to the first embodiment and the second embodimentwill be omitted.

In the second mode, the first control circuit 114 outputs the selectionsignal Vgclp and the selection signal Vgclm to the first selectioncircuit 14, and the first selection circuit 14 couples the detectionelectrodes Rx included in the detection electrode blocks RxB to the datalines SGL in accordance with both the selection patterns, or theselection pattern Cpp and the selection pattern Cpm. In accordance witha signal from the second control circuit 115, the second selectioncircuit couples the data lines SGL to the detection circuit 40. Withthis operation, the detection circuit 40 acquires the detection signalsSvp (Svp₁, Svp₂, Svp₃, Svp₄) and the detection signals Svm (Svm₁, Svm₂,Svm₃, Svm4). As described in Expression (7), the signal computingcircuit 44 of the detection circuit 40 subtracts the detection signalsSvm from the detection signals Svp to generate the detection signals Svcand decodes the detection signals Svc based on Expression (5) togenerate the detection signals Sid.

In the second mode, both the positive sign selection operation Tdp andthe negative sign selection operation Tdm are performed, which causes adetection period in the second mode to be longer than that in the firstmode. However, in the second mode, the number of times of samplingincreases, which reduces an S/N ratio. Thus, the detection circuit 40may further have a noise detection circuit, calculate the amount ofnoise (e.g., the S/N ratio) of the detection signals Sid acquired in thefirst mode, and output, to the detection control circuit 11, a switchingsignal for switching from the first mode to the second mode when theamount of noise exceeds a certain threshold. With this operation, underenvironments in which noise is mixed into signals, the detectionapparatus 100 can detect signals with low noise by the second mode;whereas, under environments in which noise is hard to be mixed intosignals, the detection apparatus 100 can output a detection result athigher speed by the first mode.

Fourth Embodiment

The first embodiment and the second embodiment described an operationexample when the sign selection operation was used for fingerprintdetection in the Y direction (the second direction). In a fourthembodiment, the following describes an operation example when the signselection driving is used for fingerprint detection in the X direction(the first direction) and the Y direction (the second direction). Inthis embodiment, in order to distinguish the detection electrode blocksRxB from second detection electrode blocks BKNB described later, thedetection electrode blocks RxB are referred to as first detectionelectrode blocks RxB.

The following describes an example of a case in which positive signselection operations Tdp are performed with reference to FIGS. 17A to20D. FIGS. 17A to 17D are illustrative diagrams for illustrating anexample of a selection pattern by the second selection circuit whendetection electrodes are selected in accordance with a first selectionpattern by the first selection circuit according to the fourthembodiment. FIGS. 18A to 18D are illustrative diagrams for illustratingan example of a selection pattern by the second selection circuit whendetection electrodes are selected in accordance with a second selectionpattern by the first selection circuit according to the fourthembodiment. FIGS. 19A to 19D are illustrative diagrams for illustratingan example of a selection pattern by the second selection circuit whendetection electrodes are selected in accordance with a third selectionpattern by the first selection circuit according to the fourthembodiment. FIGS. 20A to 20D are illustrative diagrams for illustratingan example of a selection pattern by the second selection circuit whendetection electrodes are selected in accordance with a fourth selectionpattern by the first selection circuit according to the fourthembodiment.

In the fourth embodiment, the second selection circuit 15 includesswitch elements SW2 a and switch elements SW2 b. The detection circuit40 includes a first detection circuit DET1 and a second detectioncircuit DET2. One end of one switch element SW2 a and one end of oneswitch element SW2 b are coupled to the same data line SGL, the otherend of the switch element SW2 a is coupled to the first detectioncircuit DET1, and the other end of the switch element SW2 b is coupledto the second detection circuit DET2. The switch element SW2 a and theswitch element SW2 b are coupled to the same switch control line SWL.When a first voltage is supplied to the switch control line SWL, theswitch element SW2 a couples the data line SGL to the first detectioncircuit DET1, whereas the switch element SW2 b uncouples the data lineSGL from the second detection circuit DET2. When a second voltagedifferent from the first voltage is supplied to the switch control lineSWL, the switch element SW2 a uncouples the data line SGL from the firstdetection circuit DET1, whereas the switch element SW2 b couples thedata line SGL to the second detection circuit DET2. For example, thedata line SGL(l) is coupled to both one end of a switch element SW2 a(1)and one end of a switch element SW2 b(1), the other end of the switchelement SW2 a(1) is coupled to the first detection circuit DET1, and theother end of the switch element SW2 b(1) is coupled to the seconddetection circuit DET2.

The other end of each of the switch elements SW2 a coupled to thedetection electrodes Rx included in a corresponding one of the seconddetection electrode block BKNB is coupled to the first detection circuitDET1 via common wiring. For example, the other ends of switch elementsSW2 a(1), SW2 a(1+1), SW2 a(1+2), and SW2 a(1+3) are coupled to thefirst detection circuit DET1 via the same common wiring. Further, theother end of each of the switch elements SW2 b coupled to the detectionelectrodes Rx included in the second detection electrode block BKNB iscoupled to the second detection circuit DET2 via common wiring. Forexample, the other ends of switch elements SW2 b(1), SW2 b(1+1), SW2b(1+2), and SW2 b(l+3) are coupled to the second detection circuit DET2via the same common wiring.

FIG. 17A illustrates a first detection operation according to the fourthembodiment, FIG. 17B illustrates a second detection operation accordingto the fourth embodiment, FIG. 17C illustrates a third detectionoperation according to the fourth embodiment, and FIG. 17D illustrates afourth detection operation according to the fourth embodiment. Asillustrated in FIG. 17A through FIG. 17D, in a first detection operationTep11, a second detection operation Tep12, a third detection operationTep13, and a fourth detection operation Tep14, the first selectioncircuit 14 performs the positive sign selection operation Tdp1 based onthe selection signal Vgclp from the first control circuit 114.Specifically, in accordance with the elements “1” on the first row ofthe square matrix Hv described in Expression (2), the detectionelectrodes Rx belonging to second detection electrode blocks BKNB(k),BKNB(k+1), BKNB(k+2), and BKNB(k+3) are selected as the detectionelectrodes Rx as the first selection targets of the square matrix Hv.

The detection electrodes Rx of the second detection electrode blockBKNB(k) is detection electrodes Rx coupled to the scan line GCL(k). Thedetection electrodes Rx of the second detection electrode blockBKNB(k+1) is detection electrodes Rx coupled to the scan line GCL(k+1).The detection electrodes Rx of the second detection electrode blockBKNB(k+2) is detection electrodes Rx coupled to the scan line GCL(k+2).The detection electrodes Rx of the second detection electrode blockBKNB(k+3) is detection electrodes Rx coupled to the scan line GCL(k+3).

$\begin{matrix}{{Hh} = \left\{ \begin{matrix}1 & 1 & 1 & 1 \\1 & {- 1} & 1 & {- 1} \\1 & 1 & {- 1} & {- 1} \\1 & {- 1} & {- 1} & 1\end{matrix} \right)} & (8)\end{matrix}$

As illustrated in FIG. 17A, the second selection circuit 15simultaneously performs the positive sign selection operation Tdp andthe negative sign selection operation Tdm in the X direction (the firstdirection). In the first detection operation Tep11, the second selectioncircuit 15 selects the detection electrodes Rx belonging to the firstdetection electrode blocks RxB(l), RxB(l+1), RxB(l+2), and RxB(l+3) asthe detection electrodes Rx as the first selection targets of the squarematrix Hh in accordance with the elements “1” on the first column of thesquare matrix Hh described in Expression (8), and the selected detectionelectrodes Rx are coupled to the first detection circuit DET1 via thesecond selection circuit 15. There are no elements “−1” on the firstcolumn of the square matrix Hh, and the detection electrodes Rx are notselected as the second selection targets of the square matrix Hhcorresponding to the elements “−1.”

The square matrix Hh of Expression (8) is an Hadamard matrix and is asquare matrix in which “1” or “−1” are included as elements and anydifferent two rows form an orthogonal matrix. The order t of the squarematrix Hh is equal to or greater than the number u of the detectionelectrodes Rx included in the second detection electrode block BKNB(k).In the fourth embodiment, the order t of the square matrix Hh is 4,which is the same as the number u of the detection electrodes Rxincluded in the second detection electrode block BKNB.

A signal obtained by integrating the detection signals of the respectivedetection electrodes Rx is output to the first detection circuit DET1 asa detection signal Svpp₁₁. A detection signal Svpm₁₁ of the seconddetection circuit DET2 is 0 (Svpm₁₁=0). From the differencetherebetween, the detection circuit 40 calculates a detection signalScp₁₁ (Scp₁₁=Svpp₁₁−Svpm₁₁).

As illustrated in FIG. 17B, in the second detection operation Tep12, thesecond selection circuit 15 selects the detection electrodes Rx of thefirst detection electrode blocks RxB(l) and RxB(l+2) as the firstselection targets of the square matrix Hh in accordance with theelements “1” on the second column of the square matrix Hh and selectsthe detection electrodes Rx of the first detection electrode blocksRxB(l+1) and RxB(l+3) as the second selection targets of the squarematrix Hh in accordance with the elements “−1” on the second column ofthe square matrix Hh. In the second detection operation Tep12illustrated in FIG. 17B, a detection signal Scp₁₂ (Scp₁₂=Svpp₁₂−Svpm₁₂)is calculated.

As illustrated in FIG. 17C, in the third detection operation Tep13, thesecond selection circuit 15 selects the detection electrodes Rx of thefirst detection electrode blocks RxB(l) and RxB(l+1) as the firstselection targets of the square matrix Hh in accordance with theelements “1” on the third column of the square matrix Hh and selects thedetection electrodes Rx of the first detection electrode blocks RxB(l+2)and RxB(l+3) as the second selection targets of the square matrix Hh inaccordance with the elements “−1” on the third column of the squarematrix Hh. In the third detection operation Tep13 illustrated in FIG.17C, a detection signal Scp₁₃ (Scp₁₃=Sypp₁₃−Svpm₁₃) is calculated.

As illustrated in FIG. 17D, in the fourth detection operation Tep14, thesecond selection circuit 15 selects the detection electrodes Rx of thefirst detection electrode blocks RxB(l) and RxB(l+3) as the firstselection targets of the square matrix Hh in accordance with theelements “1” on the fourth column of the square matrix Hh and selectsthe detection electrodes Rx of the first detection electrode blocksRxB(l+1) and RxB(l+2) as the second selection targets of the squarematrix Hh in accordance with the elements “−1” on the fourth column ofthe square matrix Hh. In the fourth detection operation Tep14illustrated in FIG. 17D, a detection signal Scp₁₄ (Scp₁₄=Sypp₁₄−Svpm₁₄)is calculated.

FIG. 18A illustrates a fifth detection operation according to the fourthembodiment, FIG. 18B illustrates a sixth detection operation accordingto the fourth embodiment, FIG. 18C illustrates a seventh detectionoperation according to the fourth embodiment, and FIG. 18D illustratesan eighth detection operation according to the fourth embodiment. Asillustrated in FIG. 18A through FIG. 18D, in the fifth detectionoperation Tep21, the sixth detection operation Tep22, the seventhdetection operation Tep23, and the eighth detection operation Tep24, thefirst selection circuit 14 performs the positive sign selectionoperation Tdp2 based on the selection signal Vgclp from the firstcontrol circuit 114. Specifically, in accordance with the elements “1”on the second row of the square matrix Hv described in Expression (2),the detection electrodes Rx belonging to the second detection electrodeblocks BKNB(k) and BKNB(k+2) are selected as the detection electrodes Rxas the first selection targets, whereas the detection electrodes Rxbelong to the second detection electrode blocks BKNB(k+1) and BKNB(k+3)are selected as the detection electrodes Rx as the second selectiontargets.

In the fifth detection operation Tep21 illustrated in FIG. 18A, thesecond selection circuit 15 selects the detection electrodes Rxbelonging to the first detection electrode blocks RxB(l), RxB(l+1),RxB(l+2), and RxB(l+3) as the detection electrodes Rx as the firstselection targets of the square matrix Hh in accordance with theelements “1” on the first column of the square matrix Hh. In the fifthdetection operation Tep21 illustrated in FIG. 18A, a detection signalScp₂₁ (Scp₂₁=Svpp₂₁−Svpm₂₁) is calculated.

In the sixth detection operation Tep22 illustrated in FIG. 18B, thesecond selection circuit 15 selects the detection electrodes Rx of thefirst detection electrode blocks RxB(l) and RxB(l+2) as the firstselection targets of the square matrix Hh in accordance with theelements “1” on the second column of the square matrix Hh and selectsthe detection electrodes Rx of the first detection electrode blocksRxB(l+1) and RxB(l+3) as the second selection targets of the squarematrix Hh in accordance with the elements “−1” on the second column ofthe square matrix Hh. In the sixth detection operation Tep22 illustratedin FIG. 18B, a detection signal Scp₂₂ (Scp₂₂=Svpp₂₂−Svpm₂₂) iscalculated.

In the seventh detection operation Tep23 illustrated in FIG. 18C, thesecond selection circuit 15 selects the detection electrodes Rx of thefirst detection electrode blocks RxB(l) and RxB(l+1) as the firstselection targets of the square matrix Hh in accordance with theelements “1” on the third column of the square matrix Hh and selects thedetection electrodes Rx of the first detection electrode blocks RxB(l+2)and RxB(l+3) as the second selection targets of the square matrix Hh inaccordance with the elements “−1” on the third column of the squarematrix Hh. In the seventh detection operation Tep23 illustrated in FIG.18C, a detection signal Scp₂₃ (Scp₂₃=Svpp₂₃−Svpm₂₃) is calculated.

In the eighth detection operation Tep24 illustrated in FIG. 18D, thesecond selection circuit 15 selects the detection electrodes Rx of thefirst detection electrode blocks RxB(l) and RxB(l+3) as the firstselection targets of the square matrix Hh in accordance with theelements “1” on the fourth column of the square matrix Hh and selectsthe detection electrodes Rx of the first detection electrode blocksRxB(l+1) and RxB(l+2) as the second selection targets of the squarematrix Hh in accordance with the elements “−1” on the fourth column ofthe square matrix Hh. In the eighth detection operation Tep24illustrated in FIG. 18D, a detection signal Scp₂₄ (Scp₂₄=Svpp₂₄−Svpm₂₄)is calculated.

FIG. 19A illustrates a ninth detection operation according to the fourthembodiment, FIG. 19B illustrates a 10th detection operation according tothe fourth embodiment, FIG. 19C illustrates an 11th detection operationaccording to the fourth embodiment, and FIG. 19D illustrates a 12thdetection operation according to the fourth embodiment. As illustratedin FIG. 19A through FIG. 19D, in the ninth detection operation Tep31,the 10th detection operation Tep32, the 11th detection operation Tep33,and the 12th detection operation Tep34, the first selection circuit 14performs the positive sign selection operation Tdp3 based on theselection signal Vgclp from the first control circuit 114. Specifically,the detection electrodes Rx belonging to the second detection electrodeblocks BKNB(k) and BKNB(k+1) are selected as the detection electrodes Rxas the first selection targets in accordance with the elements “1” onthe third row of the square matrix Hv described in Expression (2),whereas the detection electrodes Rx belonging to the second detectionelectrode blocks BKNB(k+2) and BKNB(k+3) are selected as the detectionelectrodes Rx as the second selection targets.

In the ninth detection operation Tep31 illustrated in FIG. 19A, thesecond selection circuit 15 selects the detection electrodes Rxbelonging to the first detection electrode blocks RxB(l), RxB(l+1),RxB(l+2), and RxB(l+3) as the detection electrodes Rx as the firstselection targets of the square matrix Hh in accordance with theelements “1” on the first column of the square matrix Hh. In the ninthdetection operation Tep31 illustrated in FIG. 19A, a detection signalScp₃₁ (Scp₃₁=Svpp₃₁−Svpm₃₁) is calculated.

In the 10th detection operation Tep32 illustrated in FIG. 19B, thesecond selection circuit 15 selects the detection electrodes Rx of thefirst detection electrode blocks RxB(l) and RxB(l+2) as the firstselection targets of the square matrix Hh in accordance with theelements “1” on the second column of the square matrix Hh and selectsthe detection electrodes Rx of the first detection electrode blocksRxB(l+1) and RxB(l+3) as the second selection targets of the squarematrix Hh in accordance with the elements “−1” on the second column ofthe square matrix Hh. In the 10th detection operation Tep32 illustratedin FIG. 19B, a detection signal Scp₃₂ (Scp₃₂=Svpp₃₂−Svpm₃₂) iscalculated.

In the 11th detection operation Tep33 illustrated in FIG. 19C, thesecond selection circuit 15 selects the detection electrodes Rx of thefirst detection electrode blocks RxB(l) and RxB(l+1) as the firstselection targets of the square matrix Hh in accordance with theelements “1” on the third column of the square matrix Hh and selects thedetection electrodes Rx of the first detection electrode blocks RxB(l+2)and RxB(l+3) as the second selection targets of the square matrix Hh inaccordance with the elements “−1” on the third column of the squarematrix Hh. In the 11th detection operation Tep33 illustrated in FIG.19C, a detection signal Scp₃₃ (Scp₃₃=Svpp₃₃−Svpm₃₃) is calculated.

In the 12th detection operation Tep34 illustrated in FIG. 19D, thesecond selection circuit 15 selects the detection electrodes Rx of thefirst detection electrode blocks RxB(l) and RxB(l+3) as the firstselection targets of the square matrix Hh in accordance with theelements “1” on the fourth column of the square matrix Hh and selectsthe detection electrodes Rx of the first detection electrode blocksRxB(l+1) and RxB(l+2) as the second selection targets of the squarematrix Hh in accordance with the elements “−1” on the fourth column ofthe square matrix Hh. In the 12th detection operation Tep34 illustratedin FIG. 19D, a detection signal Scp₃₄ (Scp₃₄=Svpp₃₄−Svpm₃₄) iscalculated.

FIG. 20A illustrates a 13th detection operation according to the fourthembodiment, FIG. 20B illustrates a 14th detection operation according tothe fourth embodiment, FIG. 20C illustrates a 15th detection operationaccording to the fourth embodiment, and FIG. 20D illustrates a 16thdetection operation according to the fourth embodiment. As illustratedin FIG. 20A through FIG. 20D, in the 13th detection operation Tep41, the14th detection operation Tep42, the 15th detection operation Tep43, andthe 16th detection operation Tep44, the first selection circuit 14performs the positive sign selection operation Tdp4 based on theselection signal Vgclp from the first control circuit 114. Specifically,the detection electrodes Rx belonging to the second detection electrodeblocks BKNB(k) and BKNB(k+3) are selected as the detection electrodes Rxas the first selection targets in accordance with the elements “1” onthe fourth row of the square matrix Hv described in Expression (2),whereas the detection electrodes Rx belonging to the second detectionelectrode blocks BKNB(k+1) and BKNB(k+2) are selected as the detectionelectrodes Rx as the second selection targets.

In the 13th detection operation Tep41 illustrated in FIG. 20A, thesecond selection circuit 15 selects the detection electrodes Rxbelonging to the first detection electrode blocks RxB(l), RxB(l+1),RxB(l+2), and RxB(l+3) as the detection electrodes Rx as the firstselection targets of the square matrix Hh in accordance with theelements “1” on the first column of the square matrix Hh. In the 13thdetection operation Tep41 illustrated in FIG. 20A, a detection signalScp₄₁ (Scp₄₁=Svpp₄₁−Svpm₄₁) is calculated.

In the 14th detection operation Tep42 illustrated in FIG. 20B, thesecond selection circuit 15 selects the detection electrodes Rx of thefirst detection electrode blocks RxB(l) and RxB(l+2) as the firstselection targets of the square matrix Hh in accordance with theelements “1” on the second column of the square matrix Hh and selectsthe detection electrodes Rx of the first detection electrode blocksRxB(l+1) and RxB(l+3) as the second selection targets of the squarematrix Hh in accordance with the elements “−1” on the second column ofthe square matrix Hh. In the 14th detection operation Tep42 illustratedin FIG. 20B, a detection signal Scp₄₂ (Scp₄₂=Svpp₄₂−Svpm₄₂) iscalculated.

In the 15th detection operation Tep43 illustrated in FIG. 20C, thesecond selection circuit 15 selects the detection electrodes Rx of thefirst detection electrode blocks RxB(l) and RxB(l+1) as the firstselection targets of the square matrix Hh in accordance with theelements “1” on the third column of the square matrix Hh and selects thedetection electrodes Rx of the first detection electrode blocks RxB(l+2)and RxB(l+3) as the second selection targets of the square matrix Hh inaccordance with the elements “−1” on the third column of the squarematrix Hh. In the 15th detection operation Tep43 illustrated in FIG.20C, a detection signal Scp₄₃ (Scp₄₃=Svpp₄₃−Svpm₄₃) is calculated.

In the 16th detection operation Tep44 illustrated in FIG. 20D, thesecond selection circuit 15 selects the detection electrodes Rx of thefirst detection electrode blocks RxB(l) and RxB(l+3) as the firstselection targets of the square matrix Hh in accordance with theelements “1” on the fourth column of the square matrix Hh and selectsthe detection electrodes Rx of the first detection electrode blocksRxB(l+1) and RxB(l+2) as the second selection targets of the squarematrix Hh in accordance with the elements “−1” on the fourth column ofthe square matrix Hh. In the 16th detection operation Tep44 illustratedin FIG. 20D, a detection signal Scp₄₄ (Scp₄₄=Svpp₄₄−Svpm₄₄) iscalculated.

As described above, the signal computing circuit 44 calculates the dataof the 16 detection signals Scp by the first detection operation throughthe 16th detection operation. The data of the detection signals Scp arestored in the storage circuit 48. When a matrix SinuX consisting of thedetection signals Si of the respective detection electrodes Rx includedin the n first detection electrode blocks RxB and the u second detectionelectrode blocks BKNB is assumed, the sign selection driving with thesquare matrix Hv is performed for the column direction, and the signselection driving with the square matrix Hh is performed for the rowdirection, a matrix ScX consisting of the detection signals Sc describedin Expression (9) can be obtained. The signal computing circuit 44receives the data of the detection signals Scp from the storage circuit48 and performs decoding processing based on Expression (10) to obtainvalues obtained by multiplying the detection signals Svp by the order tof the square matrix Hh. From the detection signals Scp₁₁, Scp₁₂, Scp₁₃,and Scp₁₄, four detection signals Svp₁×t:Svp₁₁×t, Svp₁₂×t, Svp₁₃×t, andSvp₁₄×t, are generated, for example. The detection signal Svp₁₁corresponds to the detection signal Svp₁ of the data line SGL(l). Thedetection signal Svp₁₂ corresponds to the detection signal Svp₁ of thedata line SGL(l+1). The detection signal Svp₁₃ corresponds to thedetection signal Svp₁ of the data line SGL(l+2). The detection signalSvp₁₄ corresponds to the detection signal Svp₁ of the data lineSGL(l+3). Similarly, the signal computing circuit 44 generates fourSvp₂×d, four Svp₃×d, and four Svp₄×d. In other words, the signalcomputing circuit 44 generates four detection signals Svp×t: Svp₁×t,Svp₂×t, Svp₃×t, and Svp₄×t, corresponding to the respective data linesSGL. For example, the signal computing circuit 44 generates detectionsignals Svp₁₁×t, Svp₁₁×t, Svp₁₁×t, and Svp₄₁×t corresponding to the dataline SGL(l).

ScX=Hv×SinuX×Hh  (9)

Svp×t=ScpX×Hh  (10)

Further, the signal computing circuit 44 generates detection signalsSc×t based on Expression (11) in a manner similar to Expression (4).More specifically, the detection signals Svp×t corresponding to therespective data lines SGL are doubled, and the detection signals Svp₁×tare subtracted therefrom to acquire detection signals Sc×t. Based on thedetection signals Svp₁₁×t, Svp₁₁×t, Svp₃₁×t, and Svp₄₁×t correspondingto the data line SGL(l), four detection signals Sc₁₁×t, Sc₁₁×t, Sc₃₁×t,and Sc₄₁×t are acquired, for example. The detection signal Sc₁₁×tcorresponds to the detection signal Svp₁₁×t. The detection signal Sc₂₁×tcorresponds to a value obtained by doubling the detection signal Svp₂₁×tand subtracting the detection signal Svp₁₁×t therefrom. The detectionsignal Sc₃₁×t corresponds to a value obtained by doubling the detectionsignal Svp₃₁×t and subtracting the detection signal Svp₁₁×t therefrom.The detection signal Sc₄₁×t corresponds to a value obtained by doublingthe detection signal Svp₄₁×t and subtracting the detection signalSvp₁₁×t therefrom.

Sc×t=(2Svp−Svp ₁)×t  (11)

Further, the signal computing circuit 44 decodes detection signalsSi×t×d from the detection signals Sc×t based on Expression (12) in amanner similar to Expression (5). The d corresponds to the order d ofthe square matrix Hv.

Si×t×d=Hv×Sc×t  (12)

Consequently, the signal computing circuit 44 can obtain a signal of avalue obtained by increasing one detection signal Si (t×d)-fold.Specifically, both t and d are 4, and the detection signal Si increased16-fold can be obtained. The coordinates extraction circuit 45 cancalculate the two-dimensional coordinates of the finger Fin or the likebeing in contact or proximity based on the decoded signal Sid. In thefourth embodiment as well, by performing decoding processing based onthe detection signals Scp obtained by integrating the detection signalsSi of the respective detection electrodes Rx, the signal intensity canbe obtained 16 times as great as that obtained in time-divisionselection driving, without increasing the voltage of the signal value ofeach node.

First Modification of Fourth Embodiment

Although the fourth embodiment exemplifies a case in which the firstselection circuit 14 performs the positive sign selection operation Tdp,whereas the second selection circuit 15 performs the positive signselection operation Tdp and the negative sign selection operation Tdm,the operations to be performed are not limited thereto. For example, thesecond selection circuit 15 may perform the negative sign selectionoperation Tdm as in the second modification of the second embodiment orperform both the positive sign selection operation Tdp and the negativesign selection operation Tdm as in the third embodiment. The secondselection circuit 15 may have only either the first detection circuitDET1 or the second detection circuit DET2 and perform only either thepositive sign selection operation Tdp or the negative sign selectionoperation Tdm as in the first embodiment and the second embodiment.

Fifth Embodiment

The specific configuration of the detection apparatus is not limited tothe modes with reference to FIG. 1 to FIG. 4 and FIG. 8.

FIG. 21 is a diagram of a configuration example of the detectionapparatus according to a fifth embodiment. In a sensor 201 illustratedin FIG. 21, the detection electrode Tx and the conductor 26 are removed;and detection electrodes Sx are arranged in a matrix, or row-columnconfiguration, in the same manner as the detection electrodes Rx, andare coupled to the scan lines GCL and the data lines SGL via the switchelements SW1. A first selection circuit 214 has a function similar tothat of the first selection circuit 14. A second selection circuit 215has a function similar to that of the second selection circuit 15. Adetection control circuit 211 has a function similar to that of thedetection control circuit 11.

In the configuration illustrated in FIG. 21, wiring L3, a plurality ofswitch elements SW3, and wiring L2 are provided between the secondselection circuit 215 and a detection circuit 240. The configurationillustrated in FIG. 21 is a configuration in which a mode in which thedetection control circuit 211 supplies the drive signal Vs to thedetection electrodes Sx via wiring L1 and a plurality of switch elementsxSW3 is employed. That is to say, in the configuration illustrated inFIG. 21, the drive signal generation circuit 112 included in thedetection control circuit 211 is coupled to the detection electrodes Sxprovided in the sensor 201 to provide the drive signal Vs thereto.

The supply of the drive signal Vs and the output of the detection signalVs can be switched by the switch elements SW3 and xSW3, for example.When the switch elements SW3 are off (a non-coupled state), the switchelements xSW3 are on (a coupled state), and the drive signal Vs issupplied to each of the detection electrodes Sx as selection targets viathe wiring L1 and the wiring L3 and via the second selection circuit 215and the data lines SGL. When the switch elements SW3 are on (a coupledstate), the switch elements xSW3 are off (a non-coupled state), and thedetection signals Sv from the detection electrodes Sx as selectiontargets are output to the detection circuit 240 via the wiring L2 andthe wiring L3. That is to say, the detection electrodes Sx in the fifthembodiment are electrodes serving as both the detection electrodes Rxand the detection electrode Tx (the drive electrode) in the firstembodiment.

The functions of the switch elements SW3 and xSW3 and the wiring L1, L2,and L3 may be included in the second selection circuit 215 or a circuitprovided separately from the second selection circuit 215. The detectioncontrol circuit 211 may include the function of the drive signalgeneration circuit 112. The switch elements SW3 and xSW3 and the wiringL1, L2, and L3 are provided on the base member 101, for example.

Sixth Embodiment

FIG. 22 is a diagram of a configuration example of the detectionapparatus according to a sixth embodiment. A sensor 301 is arranged suchthat detection electrodes Tx (drive electrodes) face a plurality ofdetection electrodes Rx in a noncontact manner. The drive signalgeneration circuit 112 of a detection control circuit 311 is coupled tothe detection electrodes Tx via a first selection circuit 314 to supplythe drive signal Vs to the detection electrodes Tx. The sensor 301 doesnot have any switch elements SW1 coupled to the detection electrodes Txin the detection area DA, and the detection electrodes Tx and the firstselection circuit 314 are coupled to each other in the peripheral areaPA. The detection electrodes Rx are coupled to the data lines SGL notthrough the switch elements SW1.

When the drive signal Vs is supplied to the detection electrodes Tx, theproximity to the detection electrode Rx by an object to be detected suchas the finger Fin has an influence on mutual capacitance occurringbetween the detection electrode Rx and the detection electrode Tx. Theconfiguration illustrated in FIG. 22 performs detection based on thepresence or absence of a change in the mutual capacitance appearing inthe drive signal Vs and the degree of the change. In the configurationillustrated in FIG. 22, a plurality of detection electrodes Tx providedsuch that the longitudinal direction thereof is along the X direction soas to be able to simultaneously drive the detection electrodes Rxarranged in the X direction, are arranged in accordance with thearrangement of the detection electrodes Rx in the Y direction. However,this is an example of the configuration of the detection electrodes Tx,and the detection electrodes Tx are not limited thereto. The shape andarrangement of the detection electrodes Tx can be changed asappropriate.

In the configuration illustrated in FIG. 22, the data lines SGL couple asecond selection circuit 315 and the detection electrodes Rx to eachother. In the configuration illustrated in FIG. 22, the first selectioncircuit 314 selects the detection electrodes Rx arranged in the Ydirection by selecting the detection electrode Tx to which the drivesignal Vs is supplied. With regard to other points, the functions of thesecond selection circuit 315 and a detection circuit 340 are similar tothose of the second selection circuit 15 and the detection circuit 40.

Seventh Embodiment

In the first embodiment, the shield layer 24 is arranged between thelayer in which the detection electrodes Rx are formed and the layer inwhich the switch elements SW1 are formed as illustrated in FIG. 7.However, the arrangement is not limited thereto. FIG. 23 is a plan viewof a detection apparatus 100A according to a seventh embodiment. Asillustrated in FIG. 23, this shield layer 124A is arranged so as to besuperimposed on circuits formed on the base member 101 such as the firstselection circuit 14 and the second selection circuit 15 in a plan view.The shield layer 124A is arranged so as to surround the detection areaDA. In the seventh embodiment, the shield layer 124A is arranged so asto surround the four sides of the rectangular detection area DA.However, the arrangement is not limited thereto. The shield layer 124Ais only required to be arranged so as to be at least superimposed on thecircuits arranged on the base member 101 and may be arranged along twosides of the detection area DA in which the first selection circuit 14and the second selection circuit 15 are arranged, for example.

The shield layer 24 may not be provided in the detection apparatus 100A,and instead the shield layer 124A may be provided in the same electrodelayer as the detection electrode Rx to cover a switch element SSWincluded in the circuits formed on the base member 101. The shield layer124A is formed of a transparent conductor such as ITO. The switchelement SSW is the switch element SW2 included in the second selectioncircuit 15, for example. Although the seventh embodiment exemplifies acase in which the shield layer 24 is not provided, the configuration ofthe detection apparatus is not limited thereto. As illustrated in FIG.24, both the shield layer 124A and the shield layer 24 may be arranged.FIG. 24 is a sectional view of the detection apparatus 100A in whichboth the shield layer 124A and the shield layer 24 are provided.

Preferable embodiments of the present invention are described above, butthe present invention is not limited to such embodiments. Contentsdisclosed in the embodiments are merely exemplary, and various kinds ofmodifications are possible without departing from the gist of thepresent invention. Any modification performed as appropriate withoutdeparting from the gist of the present invention belongs to thetechnical scope of the present invention.

What is claimed is:
 1. A detection apparatus comprising: a plurality ofdetection electrodes arranged in a first direction and a seconddirection crossing the first direction; a detection circuit configuredto be coupled to the detection electrodes to detect detection signalscorresponding to changes in capacitance of the detection electrodes; acoupling circuit configured to cause the detection electrodes to be acoupled state in which the detection electrodes are coupled to thedetection circuit and a non-coupled state in which the detectionelectrodes are uncoupled from the detection circuit; a drive electrodearranged at a position adjacent to the detection electrodes; a conductorarranged between the detection electrodes and the drive electrode; and adrive signal generation circuit configured to be coupled to the driveelectrode to supply a drive signal to the drive electrode; wherein thedetection electrodes are provided to one face of an insulatingsubstrate, and wherein a height of the drive electrode from the one faceis greater than a height of the detection electrodes from the one face.2. The detection apparatus according to claim 1, wherein the detectionapparatus has a plurality of selection patterns of the detectionelectrodes causing detection electrodes as first selection targets amongthe detection electrodes to be the coupled state in which the detectionelectrodes as the first selection targets are coupled to the detectioncircuit and causing detection electrodes as second selection targetsthat are not included in the first selection targets to be thenon-coupled state in which the detection electrodes as the secondselection targets are not coupled to the detection circuit.
 3. Thedetection apparatus according to claim 2, wherein the selection patternsdo not include any selection patterns causing detection electrodes asthe first selection targets to be the non-coupled state and causingdetection electrodes as the second selection targets to be the coupledstate.
 4. The detection apparatus according to claim 1, furthercomprising: a computing circuit configured to subtract a signal forsubtraction obtained when all the detection electrodes are the firstselection targets, from a double signal obtained by doubling a signalintensity of one of the selection patterns.
 5. The detection apparatusaccording to claim 4, wherein the coupling circuit has a first mode anda second mode different from the first mode, wherein, in the first mode,the coupling circuit performs either a first selection pattern causingthe first selection targets to be the coupled state and causing thesecond selection targets to be the non-coupled state or a secondselection pattern causing the first selection targets of the firstselection pattern to be the non-coupled state and causing the secondselection targets of the first selection pattern to be the coupledstate, and wherein, in the second mode, the coupling circuit performsboth the first selection pattern and the second selection pattern. 6.The detection apparatus according to claim 1, wherein the couplingcircuit determines the selection patterns based on positive and negativesigns of an Hadamard matrix.
 7. The detection apparatus according toclaim 4, wherein the coupling circuit determines the selection patternsbased on positive and negative signs of an Hadamard matrix.